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MMBT5087LT1G

Part No MMBT5087LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.05A SOT23 / Trans GP BJT PNP 50V 0.05A 300mW 3-Pin SOT-23 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 250 @ 100μA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 40MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023769-MMBT5087LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Family Name MMBT5087L
Introduction Date May 31, 1996
ECCN EAR99
Country of Origin China, Japan, United States of America
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian MMBT5087LT1G CAD Model

Description

ON Semiconductor MMBT5087LT1G - PNP Bipolar Transistor

The MMBT5087LT1G from ON Semiconductor is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile component is particularly suitable for amplification and switching applications where moderate power and efficiency are required. Its compact SOT-23 package makes it ideal for space-constrained applications, while ensuring reliable thermal performance and power handling capabilities.

Key Features

  • PNP Transistor Type: This BJT is a PNP type, meaning the majority charge carriers are holes, making it suitable for use in positive power supply environments.
  • High Voltage: The MMBT5087LT1G supports a collector-emitter voltage (VCEO) of -25V, providing a good margin for various circuit designs.
  • Collector Current: It has a continuous collector current (IC) rating of -50mA, allowing for moderate current handling in a circuit.
  • Power Dissipation: With a power dissipation of 225mW, it can handle a fair amount of power for its size, making it suitable for a range of applications.
  • Gain Bandwidth Product (fT): The device offers a transition frequency of 50MHz, which is beneficial for applications requiring high-speed switching.
  • Compact SOT-23 Package: Its small surface-mount package allows for efficient use of PCB real estate, while also providing good thermal characteristics.

Applications

The MMBT5087LT1G is a versatile component that can be used in various applications such as:

  • Signal amplification in audio and video equipment
  • Driver stages in power amplifiers
  • Switching circuits in consumer electronics
  • Voltage regulation modules
  • General-purpose switching and amplification

ON Semiconductor's commitment to quality ensures that the MMBT5087LT1G meets the stringent requirements of the electronics industry, providing reliability and performance for designers and engineers. Whether you are working on a new design or replacing an existing component, the MMBT5087LT1G offers a balance of performance, size, and power handling that can meet the needs of a diverse range of electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,060+ $0.0472 $50.0320
2,265+ $0.0442 $100.1130
3,515+ $0.0427 $150.0905
5,030+ $0.0398 $200.1940
6,530+ $0.0383 $250.0990
8,155+ $0.0368 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 141,960 pieces
MOQ: 1060 pcs
Order Increment : 1 pcs
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