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MMBT6427LT1G

Part No MMBT6427LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 40V 0.5A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 1.5V @ 500μA, 500mA
Collector Cut-off Current(Max) 1μA
Typical Gain (hFE) (Min) 20000 @ 100mA, 5V
Maximum Power Dissipation 225mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023781-MMBT6427LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian MMBT6427LT1G CAD Model

Description

ON Semiconductor MMBT6427LT1G NPN Bipolar Transistor

The MMBT6427LT1G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This compact surface-mount component is a crucial building block in modern electronic circuits, offering a blend of versatility and reliability for a broad range of applications.

With its SOT-23 package, the MMBT6427LT1G is optimized for space-constrained applications. The small footprint does not compromise its electrical performance, which is characterized by a collector-emitter voltage (VCEO) of 40V and a collector current (IC) capability of up to 500mA, making it suitable for moderate power handling requirements.

The device features a high current gain bandwidth product (fT) of 300MHz, which ensures that it can handle high-frequency signals efficiently, making it an excellent choice for amplification in RF applications. Its low collector-emitter saturation voltage (VCE(sat)) ensures efficient operation at low voltages, thereby reducing power dissipation and improving overall energy efficiency in electronic circuits.

The MMBT6427LT1G also boasts a high gain, with a DC current gain (hFE) range of 100 to 300 when the collector current is at 10mA. This high gain ensures that the transistor can amplify weak signals without significant loss of fidelity, which is essential for precision analog circuits.

ON Semiconductor has designed the MMBT6427LT1G with reliability in mind. It is RoHS compliant and features a robust thermal performance, which allows it to operate effectively over a wide temperature range of -55°C to +150°C without degradation in performance. This makes it suitable for use in harsh environments and demanding applications.

In summary, the MMBT6427LT1G is a versatile, high-performance NPN transistor that offers a balance of size, efficiency, and robustness, making it well-suited for a variety of general-purpose applications in both commercial and industrial electronic systems.

For detailed specifications and application guidelines, designers and engineers are encouraged to consult the datasheet provided by ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,585+ $0.0316 $50.0860
3,380+ $0.0296 $100.0480
5,245+ $0.0286 $150.0070
7,520+ $0.0266 $200.0320
9,770+ $0.0256 $250.1120
12,200+ $0.0246 $300.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 375,410 pieces
MOQ: 1585 pcs
Order Increment : 1 pcs
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