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MMBT6427LT1G

Part No MMBT6427LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 40V 0.5A SOT23
Datasheet
Sample
ECAD Module ECAD
rohs

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Pricing & Ordering $0.0529 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
705+
$0.0710
$50.055
1,725+
$0.0580
$100.050
2,635+
$0.0570
$150.195
3,640+
$0.0550
$200.200
4,720+
$0.0530
$250.160
6,250+
$0.0480
$300.000
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 605,000 pieces
MOQ: 705 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 1.5V @ 500μA, 500mA
Collector Cut-off Current(Max) 1μA
Typical Gain (hFE) (Min) 20000 @ 100mA, 5V
Maximum Power Dissipation 225mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023781-MMBT6427LT1G
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 40 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Automotive

Description

ON Semiconductor MMBT6427LT1G NPN Bipolar Transistor

The MMBT6427LT1G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This compact surface-mount component is a crucial building block in modern electronic circuits, offering a blend of versatility and reliability for a broad range of applications.

With its SOT-23 package, the MMBT6427LT1G is optimized for space-constrained applications. The small footprint does not compromise its electrical performance, which is characterized by a collector-emitter voltage (VCEO) of 40V and a collector current (IC) capability of up to 500mA, making it suitable for moderate power handling requirements.

The device features a high current gain bandwidth product (fT) of 300MHz, which ensures that it can handle high-frequency signals efficiently, making it an excellent choice for amplification in RF applications. Its low collector-emitter saturation voltage (VCE(sat)) ensures efficient operation at low voltages, thereby reducing power dissipation and improving overall energy efficiency in electronic circuits.

The MMBT6427LT1G also boasts a high gain, with a DC current gain (hFE) range of 100 to 300 when the collector current is at 10mA. This high gain ensures that the transistor can amplify weak signals without significant loss of fidelity, which is essential for precision analog circuits.

ON Semiconductor has designed the MMBT6427LT1G with reliability in mind. It is RoHS compliant and features a robust thermal performance, which allows it to operate effectively over a wide temperature range of -55°C to +150°C without degradation in performance. This makes it suitable for use in harsh environments and demanding applications.

In summary, the MMBT6427LT1G is a versatile, high-performance NPN transistor that offers a balance of size, efficiency, and robustness, making it well-suited for a variety of general-purpose applications in both commercial and industrial electronic systems.

For detailed specifications and application guidelines, designers and engineers are encouraged to consult the datasheet provided by ON Semiconductor.

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