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MMUN2215LT1G

Part No MMUN2215LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.4W SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 400mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 024090-MMUN2215LT1G
Ultra Librarian 3D Model Ultra Librarian MMUN2215LT1G CAD Model

Description

ON Semiconductor MMUN2215LT1G - Bipolar (BJT) Transistor

The MMUN2215LT1G from ON Semiconductor is a high-performance bipolar junction transistor (BJT) designed to offer a blend of efficiency and reliability for a wide range of applications. This PNP transistor is a part of ON Semiconductor's innovative portfolio of semiconductor solutions, crafted to meet the rigorous demands of modern electronic circuits.

Constructed with ON Semiconductor's cutting-edge technology, the MMUN2215LT1G transistor is characterized by its low V<sub>CE(sat) voltage, which significantly improves its power efficiency by minimizing the voltage drop across the collector-emitter junction when the transistor is in the saturation region. This feature makes it an ideal choice for power management in portable devices where extended battery life is crucial.

With a collector-emitter voltage (V<sub>CEO) of -50V and a collector current capability of -100mA, this transistor can handle moderate power applications while maintaining a compact SOT-23 surface-mount package. This small form factor enables designers to save valuable board space without compromising on performance.

The MMUN2215LT1G also boasts a high current gain bandwidth product (f<sub>T), allowing it to perform well in high-frequency operations. This makes it suitable for amplification and switching applications in consumer electronics, such as audio processors, amplifiers, and signal conditioning circuits.

For safety and reliability, the MMUN2215LT1G includes features such as a high ESD tolerance, ensuring the device's robustness against electrostatic discharges during handling and operation. It is also designed to meet the environmental standards, being lead-free and RoHS compliant, which reflects ON Semiconductor's commitment to environmentally friendly manufacturing practices.

The MMUN2215LT1G is a versatile component that offers a combination of low saturation voltage, high-frequency performance, and space-saving packaging. It is well-suited for designers looking to optimize their circuit designs for power efficiency, reliability, and miniaturization. Whether for power management, amplification, or switching, the MMUN2215LT1G from ON Semiconductor is a reliable choice for your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
860+ $0.0583 $50.1380
2,095+ $0.0478 $100.1410
3,240+ $0.0463 $150.0120
4,465+ $0.0448 $200.0320
5,775+ $0.0433 $250.0575
7,715+ $0.0389 $300.1135
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 860 pcs
Order Increment : 1 pcs
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