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MPSW45

Part No MPSW45
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 40V 1A TO92 / Bipolar (BJT) Transistor NPN - Darlington 40 V 1 A 100MHz 1 W Through Hole TO-92 (TO-226)
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr ON Semiconductor
Series -
Package Bulk
Product Status Obsolete
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25000 @ 200mA, 5V
Power - Max 1 W
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92 (TO-226)
Base Product Number MPSW45
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Standard Package 5,000 pcs
Win Source Part Number 1382945-MPSW45
Ultra Librarian 3D Model Ultra Librarian MPSW45 CAD Model

Description

ON Semiconductor MPSW45 NPN Bipolar Power Transistor

The ON Semiconductor MPSW45 is a robust NPN bipolar power transistor designed for high-power switching applications and amplifier systems. This versatile component is well-suited for a range of electronic circuits, offering a blend of performance, reliability, and efficiency that makes it a staple in the industry.

The MPSW45 features a collector-emitter voltage (Vceo) of 40V, collector-base voltage (Vcbo) of 60V, and emitter-base voltage (Vebo) of 4.0V. With a collector current (Ic) of up to 1A, it can handle significant power levels for a variety of uses. The power dissipation (Pd) is rated at 1W, ensuring that the device can manage thermal stress during operation.

One of the key attributes of the MPSW45 is its high DC current gain (hFE), ranging from 40 to 320 at a collector current of 150mA. This high gain makes it an excellent choice for amplification purposes, where signal strength needs to be increased without adding noise or distortion.

The MPSW45 comes in a TO-226 package, also known as the TO-92 variant, which is widely used in the industry due to its compact size and ease of mounting on printed circuit boards. The package is designed to offer good thermal and electrical isolation, ensuring stable performance over a wide range of operating conditions.

ON Semiconductor has designed the MPSW45 with a focus on reliability. It features a rugged construction that can withstand the stresses of both high voltage and high current applications. The device also includes built-in safeguards against overcurrent and thermal overload, providing additional protection for both the transistor and the circuit it is used in.

Whether it's being used in power regulation systems, motor control circuits, or as a driver for high-power LEDs, the MPSW45 is an excellent choice for designers looking for a dependable and efficient power transistor. Its combination of power handling, gain, and packaging makes it a versatile component that can be used in a wide array of electronic applications.

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