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MTB30P06VT4G

Part No MTB30P06VT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 30A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2190pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 3W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1081045-MTB30P06VT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MTB30P06VT4G CAD Model

Description

Introducing the MTB30P06VT4G Power MOSFET by ON Semiconductor

The MTB30P06VT4G is a state-of-the-art Power MOSFET brought to you by ON Semiconductor, a leading figure in the semiconductor industry. This device is designed to deliver high performance and reliability for a wide range of applications. The MTB30P06VT4G is a P-Channel MOSFET that operates at -60V and -30A, making it an ideal choice for switching applications that require efficient power management.

Key Features

  • High Current Capacity: With a continuous drain current of -30A, this MOSFET can handle significant power loads, making it suitable for high-power applications.
  • Low On-Resistance: The device boasts a low on-resistance of 45 mOhms at 10V, which translates to reduced power losses and improved efficiency in your circuits.
  • High Voltage Rating: With a drain-to-source voltage of -60V, the MTB30P06VT4G can be used in circuits that experience higher voltages, providing a wide safety margin.
  • Advanced Technology: Utilizing ON Semiconductor's trench technology, this MOSFET offers superior performance, including faster switching speeds and reduced gate charge.
  • Thermal Management: The device is encapsulated in a DPAK package, which aids in heat dissipation, ensuring stable operation even under high load conditions.

Applications

The MTB30P06VT4G is versatile and can be used in a variety of applications such as:

  • Power supply circuits
  • DC/DC converters
  • Motor drives
  • Battery management systems
  • Load switches

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The MTB30P06VT4G is no exception, as it is built to ensure long-term stability and performance in your electronic designs. Whether you are designing for industrial, automotive, or consumer applications, this MOSFET will help you achieve efficient power control and management.

For detailed specifications and application notes, visit the ON Semiconductor website or contact their support team. The MTB30P06VT4G is available for order, ready to enhance the performance and efficiency of your power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1289 $59.4491
45+ $2.5676 $115.5420
70+ $2.4867 $174.0690
96+ $2.4070 $231.0720
125+ $2.3262 $290.7750
167+ $2.0859 $348.3453
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 725 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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