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MTB3N100ET4

Part No MTB3N100ET4
Manufacturer ON Semiconductor
Catalog FETs - Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer ON Semiconductor
Win Source Part Number 330541-MTB3N100ET4
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MTB3N100ET4 CAD Model

Description

ON Semiconductor MTB3N100ET4 N-Channel Power MOSFET

The MTB3N100ET4 is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a renowned leader in energy-efficient innovations. This power MOSFET is part of ON Semiconductor's extensive portfolio of semiconductor components, known for their reliability and cutting-edge technology. The MTB3N100ET4 is engineered to address the demanding requirements of modern power electronic applications.

This device features a robust and durable construction that enables operation in high-current and high-voltage environments. With a continuous drain current (ID) of 3A and a drain-source voltage (VDS) of 1000V, the MTB3N100ET4 is well-suited for a wide range of applications, including switch-mode power supplies (SMPS), power management systems, and high-efficiency converters. The high breakdown voltage ensures that the device can handle voltage spikes and surges without compromising its performance or longevity.

The MTB3N100ET4 boasts a low on-resistance (RDS(on)) that minimizes conduction losses, making it an energy-efficient choice for power circuitry. This low RDS(on) also translates to reduced heat generation, which in turn can lower the need for extensive cooling systems and simplify thermal management within electronic devices.

With a TO-220AB package, the MTB3N100ET4 is designed for easy integration into a variety of circuit layouts. Its lead (Pb)-free and RoHS-compliant construction makes it an environmentally friendly option that meets current international regulations on hazardous substances in electronic components.

Key features of the MTB3N100ET4 include:

  • Drain-source voltage (VDS): 1000V
  • Continuous drain current (ID): 3A
  • Low on-resistance (RDS(on))
  • High input impedance and high switching speeds
  • TO-220AB package for ease of mounting and heat dissipation
  • Lead (Pb)-free and RoHS compliant

With its robust performance and energy efficiency, the MTB3N100ET4 from ON Semiconductor is an excellent choice for designers and engineers looking to optimize their power management systems while maintaining a strong commitment to environmental sustainability.

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