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MTP23P06V

Part No MTP23P06V
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 23A TO-220AB
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1620pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 11.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1081104-MTP23P06V
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MTP23P06V CAD Model

Description

Product Overview: MTP23P06V - ON Semiconductor

The MTP23P06V is a robust Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This P-Channel MOSFET is primarily intended for a wide range of electronic applications, where high-speed switching, low on-resistance, and high reliability are of utmost importance.

With a -60V drain-source voltage (V<sub>DS), the MTP23P06V is suitable for high-side switching applications that require a negative voltage operation. Its P-Channel configuration allows for simpler drive circuitry in negative voltage scenarios, as it can be controlled by a ground-referenced signal without the need for a charge pump or complex gate drivers.

Key Features:

  • High Current Capability: The device can handle a continuous drain current of -23A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical R<sub>DS(on) of 70mΩ, the MTP23P06V ensures efficient operation with minimal conduction losses, enhancing overall system efficiency.
  • High-Speed Switching: The MOSFET's fast switching speed makes it an excellent choice for power supplies, DC-DC converters, and motor control applications.
  • Thermal Management: Encased in a TO-220 package, the MTP23P06V is designed for optimal heat dissipation, ensuring reliability even under high-temperature operating conditions.
  • Gate Charge: The device features a low gate charge (Q<sub>G), which reduces the power required to turn the MOSFET on and off, thereby reducing switching losses.

Applications:

The versatility of the MTP23P06V allows it to be used in a variety of applications, including:

  • Power management for consumer electronics
  • DC/AC inverters
  • Motor drives and controllers
  • Switching regulators
  • Load switches

ON Semiconductor's commitment to quality ensures that the MTP23P06V meets the rigorous standards required for industrial and commercial electronic devices. With its combination of performance, efficiency, and reliability, the MTP23P06V is an excellent choice for engineers and designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 69,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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