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MUN2211T1

Part No MUN2211T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS BRT NPN 100MA 50V SC59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 338 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Base Product Number MUN2211
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 832194-MUN2211T1
Ultra Librarian 3D Model Ultra Librarian MUN2211T1 CAD Model

Description

ON Semiconductor MUN2211T1 Bipolar Transistor

The MUN2211T1 is a high-performance bipolar transistor from ON Semiconductor, designed to offer a blend of efficiency and reliability for a variety of electronic applications. This PNP transistor is a versatile component that serves as a fundamental building block in modern electronic circuits, making it a popular choice among engineers and designers for its robustness and flexibility.

Constructed with ON Semiconductor's innovative technologies, the MUN2211T1 boasts features that enhance its performance in switching and amplification tasks. Its PNP configuration allows for a smooth flow of current when a negative base voltage is applied, making it ideal for use in negative ground circuits. This characteristic is particularly useful in applications that require the control of high power devices with a low-power signal.

The MUN2211T1 comes in a compact SOT-23 package, which not only saves valuable board space but also ensures a low thermal footprint. Its small size does not compromise its power handling capabilities, as it can manage collector currents up to a specified limit while maintaining stability and efficiency.

Key specifications of the MUN2211T1 include a collector-emitter voltage (VCEO) rating that ensures the transistor can handle the voltages typically found in electronic circuits. Additionally, the device features a collector-base voltage (VCBO) and emitter-base voltage (VEBO) rating that protect the transistor from voltage spikes and ensure safe operation under various conditions.

The MUN2211T1 is widely used in linear amplification and switching applications. Its fast switching speeds make it suitable for digital and analog signal processing, while its linearity ensures accurate amplification in audio applications. The device is also used in power management circuits, such as voltage regulators and current sources, where precise control of current is essential.

ON Semiconductor's commitment to quality means that the MUN2211T1 is manufactured to the highest standards, ensuring reliability and performance consistency. Whether you're designing consumer electronics, automotive systems, or industrial controls, the MUN2211T1 is an excellent choice for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,315+ $0.0216 $50.0040
4,930+ $0.0203 $100.0790
7,655+ $0.0196 $150.0380
10,990+ $0.0182 $200.0180
14,290+ $0.0175 $250.0750
17,860+ $0.0168 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 384,000 pieces
MOQ: 2315 pcs
Order Increment : 1 pcs
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