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MUN2213JT1

Part No MUN2213JT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 338MW SC59
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 338mW
Mounting SMD (SMT)
Case / Package SC-59
Win Source Part Number 1081133-MUN2213JT1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN2213JT1 CAD Model

Description

The MUN2213JT1 from ON Semiconductor is a high-performance, small-signal NPN bipolar transistor designed to meet the stringent requirements of modern electronic circuits. This versatile component is ideal for a wide range of applications, including signal processing, amplification, and switching tasks.

Key Features

  • Transistor Type: NPN - This allows for efficient current amplification when a small base current controls a larger collector-emitter current.
  • Package: SOT-323 - A compact surface-mount package that is suitable for automated assembly processes and space-constrained applications.
  • Current Rating: The device is capable of handling a continuous collector current, making it suitable for a variety of low to medium power applications.
  • Voltage Ratings: It has a maximum collector-emitter voltage rating and a maximum collector-base voltage rating, which ensures reliable operation in circuits with moderate voltage levels.
  • Power Dissipation: With a power dissipation rating, the MUN2213JT1 can handle a certain amount of power without overheating, making it reliable for continuous operation.
  • Gain Bandwidth Product: The transistor has a specified gain bandwidth product, which indicates its ability to amplify signals up to a certain frequency, making it suitable for high-speed signal processing.

Applications

The MUN2213JT1 is designed for general-purpose amplification and switching. Its characteristics make it an excellent choice for:

  • Audio amplifiers and preamplifiers
  • Signal conditioning circuits
  • Driver stages in hi-fi systems and televisions
  • Switching circuits in consumer electronics
  • Linear amplification and switching applications

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MUN2213JT1 is no exception. It is manufactured in state-of-the-art facilities, ensuring high reliability and performance consistency. This transistor is also supported by ON Semiconductor's global network of technical support and service centers, providing customers with the confidence that they are incorporating a dependable component into their electronic designs.

Whether you're designing an audio processing unit, a communication device, or a digital switch, the MUN2213JT1 offers the performance and reliability that engineers expect from ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
610+ $0.0951 $58.0110
1,480+ $0.0781 $115.5880
2,295+ $0.0757 $173.7315
3,155+ $0.0732 $230.9460
4,085+ $0.0707 $288.8095
5,465+ $0.0634 $346.4810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,800 pieces
MOQ: 610 pcs
Order Increment : 1 pcs
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