The SI1912EDH is a P-Channel 20-V (D-S) MOSFET manufactured by Vishay. This MOSFET is designed for load switch and level shift applications, providing efficient and reliable performance in a compact package.

Applications

• Load Switching
• Level Shifting
• DC-DC Conversion
• Portable Devices
• Battery Management Systems

Features

• Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
• Low Gate Charge (Qg): Reduces switching losses and improves switching speed.
• 20 V Drain-Source Voltage (VDS): Suitable for a variety of low-voltage applications.
• Compact PowerPAK® SC-70 Package: Saves board space and enables smaller designs.
• TrenchFET® Power MOSFET Technology: Provides superior performance and efficiency.

Benefits

• High Efficiency: Low RDS(on) and Qg minimize power losses, resulting in higher overall efficiency.
• Compact Design: The small PowerPAK® SC-70 package allows for space-saving designs in portable and compact devices.
• Improved Battery Life: Reduced power dissipation contributes to longer battery life in portable applications.
• Reliable Performance: Vishay's MOSFET technology ensures reliable operation and consistent performance.
• Simplified Design: Easy to integrate into various circuit designs due to its standard specifications and readily available datasheets.

Technical Specifications

The SI1912EDH features a Drain-Source Breakdown Voltage of 20V. The typical on-resistance (RDS(on)) varies with gate-source voltage but is generally very low, contributing to high efficiency. It is surface mountable with a PowerPAK SC-70 package.