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MUN2213T1G

Part No MUN2213T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 338MW SC59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 338mW
Mounting SMD (SMT)
Case / Package SC-59
Win Source Part Number 024593-MUN2213T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MUN2213T1G CAD Model

Description

Product Overview: MUN2213T1G - ON Semiconductor

The MUN2213T1G is a versatile, high-performance bipolar transistor from ON Semiconductor, designed to meet a wide range of requirements for amplification and switching applications. This small-signal transistor is part of ON Semiconductor's innovative portfolio of semiconductor solutions, delivering reliability and efficiency for various electronic circuits.

Key Features

  • Transistor Type: PNP - This transistor is a PNP type, meaning the majority carriers are holes, making it suitable for positive side switching applications.
  • Package: SOT-23 - The MUN2213T1G comes in a compact SOT-23 surface-mount package, which is ideal for space-constrained applications.
  • Collector-Emitter Voltage (Vceo): 50V - It can withstand a collector-emitter voltage up to 50V, providing a good margin for various circuit designs.
  • Collector Current (Ic): 100mA - The transistor can handle a continuous collector current up to 100mA, making it suitable for small to medium power requirements.
  • DC Current Gain (hFE): 80 to 250 - It has a DC current gain range of 80 to 250, ensuring efficient current amplification in the circuit.
  • Power Dissipation: 225mW - With a power dissipation of 225mW, the MUN2213T1G can manage moderate levels of power without overheating.

Applications

The MUN2213T1G is suitable for a variety of applications due to its robust performance characteristics. Some common applications include:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers
  • Switching operations in power management circuits
  • Control systems in automotive and industrial electronics

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly products. The MUN2213T1G is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from harmful substances like lead, mercury, and cadmium. This commitment to sustainability makes the MUN2213T1G an excellent choice for eco-conscious designers and manufacturers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,070+ $0.0280 $57.9600
4,410+ $0.0263 $115.9830
6,850+ $0.0253 $173.3050
9,855+ $0.0235 $231.5925
12,760+ $0.0226 $288.3760
15,960+ $0.0217 $346.3320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,400 pieces
MOQ: 2070 pcs
Order Increment : 1 pcs
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