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MUN5112DW1T1G

Part No MUN5112DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 2PNP 50V SC88
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number MUN5112
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 886506-MUN5112DW1T1G
Ultra Librarian 3D Model Ultra Librarian MUN5112DW1T1G CAD Model

Description

Product Overview: MUN5112DW1T1G from ON Semiconductor

The MUN5112DW1T1G is a high-performance, dual bias resistor transistor designed and manufactured by ON Semiconductor. This innovative product is a testament to ON Semiconductor's commitment to providing energy-efficient and power management solutions. The MUN5112DW1T1G is specifically engineered to simplify circuit design and minimize component count in electronic systems.

Key Features

  • Device Configuration: The MUN5112DW1T1G features a dual monolithic design that integrates two bias resistor transistors in a single package. This design offers a compact footprint, which is ideal for high-density circuit boards.
  • Resistor Ratios: It comes with built-in bias resistors, which have a ratio of R1/R2 = 47 kΩ / 47 kΩ. This precise ratio ensures stable operation and simplifies the biasing of the transistor, reducing design complexity.
  • Power Dissipation: The device is capable of handling a power dissipation of up to 150 mW, making it suitable for a range of applications that require moderate power levels.
  • Voltage Ratings: With a collector-emitter voltage (VCEO) of 50 V, it is capable of supporting many common signal-level applications.
  • SOT-363 Package: The compact SOT-363 package is designed for surface-mount technology, allowing for efficient assembly and space-saving on PCBs.

Applications

The MUN5112DW1T1G is versatile and can be used in a variety of applications, including:

  • Signal processing
  • Power management
  • DC-DC converters
  • Telecommunications
  • Portable electronics
  • And many other general-purpose applications where space is at a premium

Quality and Reliability

ON Semiconductor ensures that the MUN5112DW1T1G meets stringent quality and reliability standards. The device's performance is guaranteed over a temperature range of -55°C to +150°C, making it reliable in a wide range of environmental conditions.

Environmental Compliance

The MUN5112DW1T1G is also environmentally friendly, complying with RoHS directives, which restrict the use of certain hazardous substances in electronic equipment. As a result, it is a suitable choice for manufacturers looking to create eco-conscious products.

In summary, the MUN5112DW1T1G from ON Semiconductor is a reliable, efficient, and versatile component that streamlines the design process for electronic systems, all while maintaining a commitment to environmental sustainability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3965 $51.5450
310+ $0.3253 $100.8430
480+ $0.3152 $151.2960
660+ $0.3050 $201.3000
850+ $0.2948 $250.5800
1,135+ $0.2644 $300.0940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 950 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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