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MUN5130DW1T1

Part No MUN5130DW1T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.25W SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
Typical Gain (hFE) (Min) 3 @ 5mA, 10V
Max Vce (sat) 250mV @ 5mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 208925-MUN5130DW1T1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MUN5130DW1T1 CAD Model

Description

ON Semiconductor MUN5130DW1T1 Dual PNP Transistor

The MUN5130DW1T1 from ON Semiconductor is a high-performance dual PNP transistor designed to offer a compact, high-efficiency solution for a variety of electronic applications. This device is housed in a SC-88 package, also known as SOT-363, which is known for its small footprint and suitability for high-density circuit designs. The MUN5130DW1T1 is engineered for applications requiring two PNP transistors with matched characteristics.

Key Features:

  • Dual PNP Transistors: The device contains two PNP transistors, which are ideal for use in push-pull configurations and other applications where matched transistor performance is beneficial.
  • Low Saturation Voltage: The MUN5130DW1T1 is designed to have a low collector-emitter saturation voltage, which results in reduced power loss and improved efficiency in switching applications.
  • High Current Gain: With a high current gain (hFE), this component ensures effective amplification of the input signal, making it suitable for a wide range of amplification tasks.
  • Small Package: The SC-88/SOT-363 package is ideal for space-constrained applications, allowing designers to incorporate this dual PNP transistor into compact circuit designs without sacrificing performance.
  • Lead-Free and RoHS Compliant: The MUN5130DW1T1 is manufactured with the environment in mind, adhering to the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment.

Applications:

The MUN5130DW1T1 is versatile and can be used in a wide range of electronic circuits. Some of the common applications include:

  • Inverter circuits
  • Signal processing
  • Power management systems
  • Audio amplifiers
  • Switching applications
  • Driver stages in amplifiers

With its combination of dual PNP configuration, low saturation voltage, and high current gain, the MUN5130DW1T1 from ON Semiconductor is an excellent choice for designers looking to optimize their circuit designs for performance and space efficiency. Its compliance with environmental standards also makes it a responsible choice for modern electronic manufacturing.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0949 $60.2195
130+ $0.8986 $116.8180
200+ $0.8709 $174.1800
275+ $0.8432 $231.8800
355+ $0.8143 $289.0765
475+ $0.7300 $346.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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