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MUN5136T1G

Part No MUN5136T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 202MW SC70
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Resistor - Emitter Base (R2) (Ohms) 100k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 202mW
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 098441-MUN5136T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MUN5136T1G CAD Model

Description

ON Semiconductor MUN5136T1G Overview

The MUN5136T1G is a high-performance PNP bipolar transistor manufactured by ON Semiconductor, a leading supplier in the semiconductor industry. This device is designed for general-purpose amplifier and switching applications, offering a combination of low voltage operation and high current capacity, making it suitable for a wide range of electronic circuits.

Key Features

  • Transistor Polarity: PNP - This indicates that the MUN5136T1G is a PNP-type bipolar transistor, which primarily uses holes as charge carriers.
  • Collector-Emitter Voltage (Vceo): 50V - The maximum voltage that can be applied from collector to emitter while the base terminal is open.
  • Collector Current (Ic): 100mA - The maximum continuous current that can flow from the collector to the emitter.
  • DC Current Gain (hFE): The device boasts a high DC current gain, providing an efficient transfer of the input signal to the output with minimal power loss.
  • Power Dissipation: The MUN5136T1G is capable of dissipating a considerable amount of power, ensuring stability and reliability in operation.
  • Operating and Storage Junction Temperature Range: The transistor can operate over a wide temperature range, making it versatile for various environmental conditions.

Applications

The MUN5136T1G is suitable for a diverse array of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers
  • Switching operations in power management systems
  • Control circuits in embedded systems

Package and Quality

Encased in a SOT-23 package, the MUN5136T1G is designed for surface-mount technology (SMT), allowing for high-density PCB mounting and a compact design. ON Semiconductor is committed to high-quality standards, ensuring that each transistor meets rigorous reliability and performance criteria.

With its versatile characteristics and reliable performance, the MUN5136T1G from ON Semiconductor is an excellent choice for designers and engineers looking to enhance their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
875+ $0.0573 $50.1375
2,125+ $0.0471 $100.0875
3,290+ $0.0456 $150.0240
4,540+ $0.0441 $200.2140
5,855+ $0.0427 $250.0085
7,855+ $0.0382 $300.0610
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,620 pieces
MOQ: 875 pcs
Order Increment : 1 pcs
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