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MUN5212T1G

Part No MUN5212T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 202MW SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 60 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 202mW
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 099897-MUN5212T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5212T1G CAD Model

Description

The MUN5212T1G from ON Semiconductor is a high-performance bipolar transistor array designed to offer a compact and efficient solution for a wide range of electronic applications. This versatile component integrates multiple transistors into a single package, providing designers with a convenient and space-saving option for their circuit designs.

Key Features

  • Transistor Configuration: The MUN5212T1G houses dual general-purpose transistors in a single SOT-363 package, making it ideal for applications where space is at a premium.
  • High Current Gain: These transistors are characterized by a high current gain (hFE), which ensures efficient current amplification in electronic circuits.
  • Low Voltage Operation: Designed to operate at low voltages, this array is suitable for portable and battery-powered devices, helping to extend their operational life.
  • Power Dissipation: With a power dissipation of 150 mW for each transistor, the MUN5212T1G can handle moderate levels of power, making it suitable for a variety of applications.
  • Polarity: The device features PNP transistors, which are commonly used in positive ground or positive power supply designs.

Applications

The MUN5212T1G is designed to cater to a diverse range of applications, including but not limited to:

  • Signal processing
  • Power management
  • Switching and amplification circuits
  • Linear amplifiers
  • Interface circuits
  • Driver circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MUN5212T1G is no exception. The device is manufactured using high-quality materials and state-of-the-art technology, ensuring reliable performance and longevity in a variety of environmental conditions. It is also RoHS compliant, adhering to environmental standards by avoiding the use of hazardous substances.

Conclusion

The MUN5212T1G transistor array from ON Semiconductor is a practical solution for designers looking to optimize board space without compromising on performance. Its dual-transistor configuration, high current gain, and low voltage operation make it a versatile choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0527 $51.3175
60+ $1.6843 $101.0580
92+ $1.6316 $150.1072
127+ $1.5790 $200.5330
164+ $1.5264 $250.3296
220+ $1.3685 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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