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MUN5213T1G

Part No MUN5213T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 202MW SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 202mW
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 024605-MUN5213T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MUN5213T1G CAD Model

Description

Product Overview: MUN5213T1G - ON Semiconductor

The MUN5213T1G is a high-performance, dual bipolar transistor from ON Semiconductor, designed to deliver efficient and reliable performance for a wide range of electronic applications. This product is an integral component for designers who require a compact and efficient solution for current amplification and switching operations.

Key Features

  • Dual Transistor Design: The MUN5213T1G features two PNP transistors in a single package, which not only saves space on the PCB but also simplifies the design and manufacturing process.
  • High Current Gain: This component is characterized by a high current gain (hFE), which ensures that a small input current can be amplified to a much larger output current, making it ideal for signal amplification applications.
  • Low Saturation Voltage: The low VCE(sat) allows for efficient operation with minimal power loss, making it suitable for low-power circuits and battery-operated devices.
  • Surface-Mount Package: The MUN5213T1G comes in a compact SOT-363 package, which is optimized for surface-mount technology, thus facilitating automated assembly and reducing production costs.
  • RoHS Compliant: ON Semiconductor ensures that the MUN5213T1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, which means it is free from harmful substances such as lead, making it environmentally friendly.

Applications

  • Power Management
  • Signal Amplification
  • Switching Circuits
  • Motor Control
  • Consumer Electronics

The MUN5213T1G dual PNP transistor is a testament to ON Semiconductor's commitment to providing high-quality components that meet the needs of modern electronic designs. With its combination of dual transistor functionality, high current gain, and low saturation voltage, it is an excellent choice for designers looking to optimize their circuit designs for both performance and space. Whether it's for power management, signal processing, or motor control, the MUN5213T1G offers a reliable and efficient solution that designers can trust.

For detailed specifications and application notes, designers and engineers are encouraged to consult the official datasheets and support documentation provided by ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
860+ $0.0583 $50.1380
2,095+ $0.0478 $100.1410
3,240+ $0.0463 $150.0120
4,465+ $0.0448 $200.0320
5,775+ $0.0433 $250.0575
7,715+ $0.0389 $300.1135
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 860 pcs
Order Increment : 1 pcs
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