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MUN5215T1G

Part No MUN5215T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 202MW SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 202mW
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 024609-MUN5215T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5215T1G CAD Model

Description

ON Semiconductor MUN5215T1G Bipolar Transistor

The MUN5215T1G from ON Semiconductor is a high-performance, dual bias resistor transistor that combines the features of a bipolar transistor with integrated bias resistors. This innovative component is designed to simplify circuit design and reduce component count in a wide range of applications, such as signal processing, power management, and control systems.

This particular model, the MUN5215T1G, is a PNP transistor, which makes it suitable for use in negative ground configurations. It is characterized by a low VCE(sat) voltage, which means it has a low voltage drop when it is conducting, thus improving efficiency and reducing power losses. The integrated bias resistors enable the transistor to automatically set its own biasing conditions, which simplifies the circuit design and can improve overall performance.

The MUN5215T1G comes in a compact SOT-363 package, which is ideal for space-constrained applications. Despite its small size, it is capable of handling a continuous collector current of up to 100 mA, and it features a maximum collector-emitter voltage of 50 V, making it robust enough for a variety of uses.

Key features of the MUN5215T1G include:

  • Device Type: Bipolar (BJT) Dual Resistor Transistor
  • Polarity: PNP
  • Collector-Emitter Voltage (VCEO Max): 50 V
  • Collector Current (IC Max): 100 mA
  • Power Dissipation: 225 mW
  • DC Current Gain (hFE): 100 to 300
  • Integrated Bias Resistor Ratio: 1 to 10
  • Mounting Type: Surface Mount
  • Package / Case: SOT-363
  • Operating Temperature Range: -55°C to +150°C

With its integrated bias resistors, the MUN5215T1G allows for automatic biasing, which can help to streamline the design process, reduce errors, and improve reliability. Its small footprint and low power consumption make it an excellent choice for portable and battery-operated devices where efficiency is crucial. Whether you're designing for consumer electronics, automotive systems, or industrial controls, the MUN5215T1G offers a reliable and convenient solution for your transistor needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,205+ $0.0263 $57.9915
5,350+ $0.0216 $115.5600
8,290+ $0.0209 $173.2610
11,430+ $0.0203 $232.0290
14,795+ $0.0196 $289.9820
19,740+ $0.0176 $347.4240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 2205 pcs
Order Increment : 1 pcs
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