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MUN5230DW1T1

Part No MUN5230DW1T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.25W SOT363 / Dual Bias Resistor Trasnsistors
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
Part Status Obsolete (End Of Life)
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 1kOhms
Resistor - Emitter Base (R2) 1kOhms
DC Current Gain (hFE) (Min) at Ic, Vce 3 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic 250mV at 5mA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Power - Max 250mW
Mounting Style SMD
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Part Number Series MUN52**DW1T
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 809340-MUN5230DW1T1
Ultra Librarian 3D Model Ultra Librarian MUN5230DW1T1 CAD Model

Description

Product Overview: MUN5230DW1T1 from ON Semiconductor

The MUN5230DW1T1 is a high-performance, dual bipolar transistor from ON Semiconductor, a leading brand in energy-efficient innovations. This product is designed to meet the requirements of modern electronic applications, providing a reliable solution for designers looking for a compact, efficient, and robust transistor for their circuits.

Key Features

  • Dual Transistor Configuration: The MUN5230DW1T1 contains two PNP transistors in a single SOT-363 package, which saves valuable board space and simplifies the design process.
  • Energy Efficiency: With ON Semiconductor's commitment to energy efficiency, this component is optimized for low power consumption, making it suitable for portable and battery-powered devices.
  • High Current Gain: This product offers excellent current gain (hFE) characteristics, ensuring a high level of amplification in various applications.
  • Low Saturation Voltage: The low VCE(sat) of the transistors minimizes power loss and improves overall efficiency in switching applications.
  • Complementary Pair: The MUN5230DW1T1 is designed to work well with its NPN counterpart, providing a complementary pair for push-pull configurations and other circuit topologies.

Applications

  • Signal processing
  • Power management circuits
  • Audio amplifiers
  • Switching and linear amplification
  • Driver stages in hi-fi equipment and televisions

The MUN5230DW1T1 by ON Semiconductor is a versatile component that offers superior performance for a wide range of applications. Its dual PNP transistor design is ideal for space-constrained applications, and the high current gain ensures efficient operation in various circuit configurations. Whether it's for audio amplification or signal processing, the MUN5230DW1T1 provides a reliable and efficient solution for your electronic designs.

Overall, the MUN5230DW1T1 stands out as a testament to ON Semiconductor's dedication to providing high-quality, energy-efficient components for the electronics industry. Its robust design, coupled with its exceptional performance characteristics, makes it a go-to choice for engineers and designers looking to enhance their products with reliable semiconductor technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3435 $51.5250
355+ $0.2818 $100.0390
550+ $0.2730 $150.1500
760+ $0.2642 $200.7920
980+ $0.2554 $250.2920
1,315+ $0.2290 $301.1350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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