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MUN5312DW1T1G

Part No MUN5312DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Supply and Demand Status Balance
Popularity High
Is this a common-used part? Yes
Win Source Part Number 109172-MUN5312DW1T1G
Manufacturer Device Package SC-88/SC70-6/SOT-363
Package 6-TSSOP, SC-88, SOT-363
Mounting Style SMD/SMT
Power - Max 250mW
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Resistor - Emitter Base (R2) (Ohms) 22k
Resistor - Base (R1) (Ohms) 22k
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Packaging Reel(TR)
Manufacturer ON Semiconductor
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Category Discrete Semiconductor Products
Ultra Librarian 3D Model Ultra Librarian MUN5312DW1T1G CAD Model

Description

ON Semiconductor MUN5312DW1T1G Dual Bipolar Transistor

The ON Semiconductor MUN5312DW1T1G is a high-performance, dual bipolar junction transistor (BJT) designed for use in a wide array of applications. This versatile device features two independent NPN transistors in a single SOT-363 package, which not only saves space but also reduces the component count in circuit designs.

Key Features:

  • Dual NPN Transistors: The MUN5312DW1T1G contains two NPN transistors, allowing for compact and efficient designs.
  • High Current Gain Bandwidth Product: With a high fT of 100 MHz, this component is suitable for amplification and switching in high-frequency applications.
  • Low Collector-Emitter Saturation Voltage: The low V<sub>CE(sat) ensures lower power dissipation and improved efficiency.
  • SOT-363 Package: The small surface-mount package is ideal for space-constrained applications and helps in achieving high-density PCB layouts.
  • Lead-Free and RoHS Compliant: The MUN5312DW1T1G meets environmental regulations, making it suitable for use in eco-friendly products.
  • High Reliability: Manufactured by ON Semiconductor, a leader in semiconductor solutions, this product offers high reliability and performance.

Applications:

The MUN5312DW1T1G is designed to meet the requirements of a variety of circuits and is particularly well-suited for:

  • Signal processing
  • Audio amplifiers
  • Switching circuits
  • Driver stages in hi-fi amplifiers and television circuits
  • Linear amplification and switching applications

Technical Specifications:

The MUN5312DW1T1G boasts an impressive set of technical specifications that make it a robust choice for designers:

  • Collector-Emitter Voltage (V<sub>CEO): 50 V
  • Collector-Base Voltage (V<sub>CBO): 60 V
  • Emitter-Base Voltage (V<sub>EBO): 6 V
  • Collector Current - Continuous (I<sub>C): 100 mA
  • Total Device Dissipation (P<sub>D): 300 mW
  • Junction Temperature (T<sub>j): -55°C to +150°C

For detailed technical data and application guidance, designers should consult the MUN5312DW1T1G datasheet provided by ON Semiconductor. This component is a reliable and efficient solution for designers looking to optimize their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
630+ $0.0795 $50.0850
1,535+ $0.0653 $100.2355
2,375+ $0.0632 $150.1000
3,270+ $0.0612 $200.1240
4,225+ $0.0592 $250.1200
5,665+ $0.0530 $300.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 630 pcs
Order Increment : 1 pcs
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