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MUN5333DW1T1G

Part No MUN5333DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 024618-MUN5333DW1T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name MUN5333DW1
Introduction Date December 02, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian MUN5333DW1T1G CAD Model

Description

The MUN5333DW1T1G is a high-performance, dual PNP transistor from ON Semiconductor, designed to deliver efficient and reliable performance for a variety of applications. This bipolar junction transistor is constructed with ON Semiconductor's innovative technologies, ensuring superior current handling capabilities and low voltage operation.

Key Features

  • Transistor Configuration: The device features a dual PNP configuration, providing two independent PNP transistors in a single package, which is ideal for applications requiring matched transistor pairs.
  • Current Handling: With a collector current rating of up to 100 mA, the MUN5333DW1T1G can handle moderate current loads, making it suitable for amplification and switching applications.
  • Low Voltage Operation: The transistor operates at low voltages, with a collector-emitter voltage (VCEO) of -50V, ensuring compatibility with low-voltage circuits and reducing power consumption.
  • Power Dissipation: It has a power dissipation of 150 mW, which allows for satisfactory performance in typical circuit configurations without the risk of overheating.
  • Package: The MUN5333DW1T1G comes in a compact SOT-363 package, which is not only space-saving but also conducive to high-density PCB layouts.
  • Moisture Sensitivity Level: It has a moisture sensitivity level (MSL) of 1, which indicates that the device has a high resistance to moisture, enhancing its reliability and lifespan in various environments.

Applications

The MUN5333DW1T1G is suitable for a broad range of applications, including but not limited to:

  • Signal processing
  • Power management
  • Audio amplifiers
  • Switching circuits
  • Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the MUN5333DW1T1G is no exception. With its robust design and manufacturing under stringent quality control processes, this dual PNP transistor is a reliable component for both commercial and industrial electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
710+ $0.0708 $50.2680
1,510+ $0.0663 $100.1130
2,345+ $0.0641 $150.3145
3,360+ $0.0596 $200.2560
4,360+ $0.0574 $250.2640
5,445+ $0.0551 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,000 pieces
MOQ: 710 pcs
Order Increment : 1 pcs
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