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MVSF2N02ELT1G

Part No MVSF2N02ELT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.8A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 3.5nC @ 4V
Max Input Capacitance 150pF @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1081230-MVSF2N02ELT1G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics, Commercial, Communications & Networking, Automotive
Ultra Librarian 3D Model Ultra Librarian MVSF2N02ELT1G CAD Model

Description

Product Overview: MVSF2N02ELT1G by ON Semiconductor

The MVSF2N02ELT1G is a cutting-edge MOSFET device engineered by ON Semiconductor, a leader in energy-efficient innovations. This product is designed to cater to a wide array of applications that demand high efficiency and reliability in power management. It is an N-channel MOSFET that offers a compact size and low on-resistance, making it an excellent choice for space-constrained and power-sensitive designs.

Key Features

  • Device Type: N-channel MOSFET
  • Package: The MVSF2N02ELT1G comes in a surface-mount SOT-23 package, which is widely used in the industry due to its small footprint.
  • Drain-Source Voltage (V<sub>DS): It supports a drain-source voltage of up to 20V, providing a broad operating range for various applications.
  • Continuous Drain Current (I<sub>D): The MOSFET is capable of a continuous drain current of 680 mA, allowing it to handle moderate power loads efficiently.
  • R<sub>DS(on): It features a low on-resistance of typically 1.25 ohms at V<sub>GS = 4.5V, which translates to reduced conduction losses and improved overall efficiency.
  • Gate Threshold Voltage (V<sub>GS(th)): The threshold voltage is in the range of 0.8V to 1.5V, making it compatible with low-voltage drive signals and logic-level gates.
  • Fast Switching Speed: The device is optimized for fast switching, enhancing performance in applications such as DC-DC converters and motor control circuits.
  • RoHS Compliant: It adheres to environmental standards and is free from hazardous substances in compliance with RoHS regulations.

Applications

The versatility of the MVSF2N02ELT1G MOSFET makes it suitable for a wide range of applications. It is particularly well-suited for:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Operated Devices
  • Load Switches
  • Motor Control Systems
  • Portable Electronics
  • Switching Regulators

ON Semiconductor's MVSF2N02ELT1G is a robust and reliable component that delivers high performance in a compact package. It is an ideal choice for designers looking to enhance the efficiency and longevity of their electronic systems while adhering to space and power constraints.

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