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NDD05N50Z-1G

Part No NDD05N50Z-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 18.5nC @ 10V
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 209142-NDD05N50Z-1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NDD05N50Z-1G CAD Model

Description

ON Semiconductor NDD05N50Z-1G Power MOSFET

The NDD05N50Z-1G is a state-of-the-art power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance component is specifically engineered for applications requiring efficient power management and high reliability. The NDD05N50Z-1G is an ideal choice for a wide range of applications, including switch-mode power supplies, power inverters, motor control systems, and other power-intensive electronic circuits.

Key Features

  • High Current Handling: With a continuous drain current of 4.8A, the NDD05N50Z-1G can handle significant power levels, making it suitable for robust applications.
  • High Voltage Capability: This MOSFET operates at a maximum drain-source voltage of 500V, providing a wide safety margin for fluctuating voltages in high-power systems.
  • Low On-Resistance: The low RDS(on) of 1.25 Ohm minimizes conduction losses and improves overall efficiency, which is crucial for energy-sensitive designs.
  • Fast Switching Performance: The component features a fast switching speed, which is essential for reducing switching losses and improving the performance of power conversion systems.
  • TO-252 (DPAK) Package: The NDD05N50Z-1G comes in a TO-252 (DPAK) package, which is known for its compact size and excellent thermal performance.

Applications

  • AC-DC and DC-DC Converters
  • Power Supply Units
  • LED Lighting Systems
  • Motor Drives and Controllers
  • Power Inverter Systems
  • Electronic Ballasts

The NDD05N50Z-1G MOSFET from ON Semiconductor is a testament to the company's commitment to providing advanced power management solutions. Its robustness, efficiency, and versatility make it a top choice for engineers and designers looking to optimize their power systems. Whether you're developing a new power supply or upgrading an existing one, the NDD05N50Z-1G offers the performance and reliability that modern electronic devices demand.

For detailed specifications, application notes, and additional resources, it is recommended to consult the official datasheet and product documentation provided by ON Semiconductor.

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