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NDF04N60ZH

Part No NDF04N60ZH
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.8A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 060141-NDF04N60ZH
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDF04N60ZH CAD Model

Description

ON Semiconductor NDF04N60ZH Power MOSFET

The NDF04N60ZH is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in energy-efficient innovations. This MOSFET is designed to meet a wide range of applications, offering a robust solution for power management challenges.

With its 600V N-channel, the NDF04N60ZH provides a high breakdown voltage, making it suitable for high voltage applications such as power supplies, converters, and inverters in both industrial and consumer electronics. Its low on-resistance (R<sub>DS(on)) ensures efficient power handling, leading to energy savings and reduced heat generation.

One of the key features of the NDF04N60ZH is its fast switching speed. This characteristic is particularly beneficial in applications where switching losses can be detrimental, such as in high-frequency power converters. The device's fast switching capability contributes to improved performance and efficiency, which is critical in modern electronic systems.

The NDF04N60ZH is also designed with a ruggedized package that can withstand high levels of stress. The device is encapsulated in a TO-220F package, known for its durability and excellent thermal performance. This ensures that the MOSFET can operate reliably even under harsh conditions, making it a reliable choice for demanding applications.

This MOSFET also features a low gate charge (Q<sub>G), which minimizes the power required to drive the gate, thus reducing the overall power consumption of the system. Additionally, the NDF04N60ZH comes with an integrated avalanche ruggedness, providing protection against unforeseen voltage spikes that can occur in electrical circuits.

In summary, the NDF04N60ZH from ON Semiconductor is a powerful and reliable component that offers high voltage capability, low on-resistance, fast switching speeds, and a rugged package. It is an excellent choice for designers looking to improve the efficiency and reliability of their power management systems. Whether you are working on industrial motor drives, power supplies, or any other high voltage application, the NDF04N60ZH is a component that can help you achieve your design goals.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0028 $50.1400
125+ $0.8229 $102.8625
190+ $0.7971 $151.4490
260+ $0.7714 $200.5640
340+ $0.7457 $253.5380
450+ $0.6686 $300.8700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,131 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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