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NGTB30N120FL2WG

Part No NGTB30N120FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH/FS 1200V 60A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Power - Max 452 W
Switching Energy 2.6mJ (on), 700µJ (off)
Input Type Standard
Gate Charge 220 nC
Td (on/off) @ 25°C 98ns/210ns
Test Condition 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 240 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number NGTB30
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648463-NGTB30N120FL2WG
Ultra Librarian 3D Model Ultra Librarian NGTB30N120FL2WG CAD Model

Description

Introducing the NGTB30N120FL2WG IGBT from ON Semiconductor

The NGTB30N120FL2WG is a state-of-the-art insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed to offer a high level of efficiency and reliability for a wide range of power applications. With its advanced features and robust design, the NGTB30N120FL2WG is an ideal choice for engineers looking to improve system performance in high-power electronics.

Key Features and Benefits

  • High Current Capability: The NGTB30N120FL2WG is capable of handling a continuous collector current of up to 30A, making it suitable for high-power applications.
  • Low On-State Voltage Drop (Vce(on)): With a low on-state voltage drop, this IGBT ensures reduced conduction losses and improved efficiency in applications.
  • Fast Switching Speed: The device boasts a fast switching speed, which is critical for reducing switching losses and improving the performance of power converters and inverters.
  • High Input Impedance: The high input impedance characteristic of the IGBT allows for easy drive and control, simplifying the design of the gate drive circuit.
  • Robust Temperature Performance: The NGTB30N120FL2WG is designed to perform reliably over a wide temperature range, ensuring stability and durability in various operating conditions.

Applications

The versatility of the NGTB30N120FL2WG IGBT allows it to be used in a broad spectrum of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverters
  • Induction Heating
  • Renewable Energy Systems, such as Solar Inverters and Wind Turbines

ON Semiconductor's NGTB30N120FL2WG IGBT offers a cutting-edge solution for designers who require a high-performance, efficient, and reliable IGBT for their power management systems. Its superior performance characteristics are tailored to meet the stringent demands of modern power electronic devices, ensuring optimal operation and long-term reliability.

For detailed specifications, application notes, and additional resources, visit the ON Semiconductor website or contact their support team for technical assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.2389 $52.3890
24+ $4.2986 $103.1664
37+ $4.1642 $154.0754
50+ $4.0299 $201.4950
65+ $3.8956 $253.2140
86+ $3.4926 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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