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NGTB50N60FLWG

Part No NGTB50N60FLWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 50A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 100A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 1.9V @ 15V, 50A
Maximum Power Dissipation 223W
Total Switching Energy(Ets) 1.1mJ (on), 600μJ (off)
Input Type Standard
Gate Charge 310nC
Turn-on and Turn-off delay time 116ns/292ns
Testing Conditions 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr) 85ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 209164-NGTB50N60FLWG
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Alternative Energy, Power Management, Maintenance & Repair
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian NGTB50N60FLWG CAD Model

Description

The NGTB50N60FLWG is a high-performance insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed for a wide range of power electronics applications, offering an optimal balance between conduction and switching losses to enhance efficiency and reliability.

Key Features

  • Current Rating: The device is capable of handling continuous collector currents up to 50A, making it suitable for high-power applications.
  • Voltage Rating: With a collector-emitter voltage rating of 600V, it can be used in systems with high voltage requirements, ensuring safe operation under various conditions.
  • Low On-Resistance: The IGBT features a low on-state voltage drop due to its optimized saturation voltage, which results in lower conduction losses and improved efficiency.
  • High-Speed Switching: It offers fast switching characteristics with a low gate charge and minimal delay times, which is critical for reducing switching losses and improving performance in high-frequency applications.
  • Co-Packaged Free Wheeling Diode: The NGTB50N60FLWG includes an integrated fast recovery diode, providing a convenient and compact solution for applications requiring a freewheeling or flyback diode.
  • Robustness: This IGBT is designed to be rugged and reliable, with features such as a maximum junction temperature of 150°C and a robust gate oxide for enhanced device longevity.

Applications

The versatility of the NGTB50N60FLWG makes it ideal for a variety of applications, including:

  • Inverters and converters for renewable energy systems, such as solar inverters and wind turbine converters.
  • Motor drives for industrial automation, including pumps, fans, and compressors.
  • Power supplies for high-performance server farms and telecommunications equipment.
  • Electric vehicle (EV) components, such as onboard chargers and powertrain modules.
  • Uninterruptible power supplies (UPS) to ensure continuous power delivery.

With its robust design and high efficiency, the ON Semiconductor NGTB50N60FLWG IGBT is a reliable choice for engineers looking to optimize their power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.8062 $58.0620
25+ $4.7644 $119.1100
38+ $4.6154 $175.3852
52+ $4.4664 $232.2528
67+ $4.3174 $289.2658
90+ $3.8716 $348.4440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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