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NGTB75N65FL2WAG

Part No NGTB75N65FL2WAG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT FIELD STOP 650V TO247-4 / Trans IGBT Chip N-CH 650V 200A 536000mW 4-Pin(4+Tab) TO-247 Tube
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 200A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 75A
Power - Max 536W
Switching Energy 610μJ (on), 1.2mJ (off)
Input Type Standard
Gate Charge 310nC
Td (on/off) @ 25°C 23ns/157ns
Test Condition 400V, 75A, 10 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-4
Manufacturer Package TO-247-4L
Win Source Part Number 790686-NGTB75N65FL2WAG
Popularity Medium
Supply and Demand Status Limited
Family Name NGTB75N65FL2WA
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NGTB75N65FL2WAG CAD Model

Description

ON Semiconductor NGTB75N65FL2WAG IGBT

The NGTB75N65FL2WAG is a high-performance insulated-gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading name in energy-efficient innovations. This IGBT is designed to meet the requirements of a wide range of power applications, offering a combination of fast switching, high efficiency, and robustness that is ideal for today's energy-conscious circuits.

Featuring a collector-emitter voltage (Vce) of 650V and a continuous collector current (Ic) of 75A at 25°C, this IGBT is capable of handling significant power levels. Its maximum power dissipation is 333W, which ensures that the device can sustain high performance without overheating. The NGTB75N65FL2WAG is also characterized by a low collector-emitter saturation voltage (Vce(sat)) of approximately 1.7V, which contributes to its high efficiency by minimizing conduction losses.

The device is built using ON Semiconductor's proprietary trench gate field stop technology, which provides an optimized balance between conduction and switching losses. This makes the NGTB75N65FL2WAG suitable for a variety of applications including solar inverters, uninterruptible power supplies (UPS), industrial drives, and high-performance power converters.

ON Semiconductor has also focused on enhancing the ruggedness and reliability of the NGTB75N65FL2WAG. It features a high peak current capability, which ensures it can handle the demands of applications with high surge currents. Additionally, it has a low total gate charge (Qg), which reduces switching losses and enables faster switching speeds, further improving the efficiency of the applications it's used in.

The NGTB75N65FL2WAG comes in a TO-247 package, which is widely used in high-power applications due to its ability to efficiently dissipate heat. This package also allows for easy integration into various circuit designs. With its robust construction and superior electrical characteristics, the NGTB75N65FL2WAG from ON Semiconductor stands out as a reliable choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2354 $62.3540
23+ $5.1162 $117.6726
35+ $4.9563 $173.4705
49+ $4.7964 $235.0236
63+ $4.6366 $292.1058
84+ $4.1568 $349.1712
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Availability: 9,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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