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NGTG30N60FLWG

Part No NGTG30N60FLWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 60A 250W TO247  /  IGBT Trench Field Stop 600 V 60 A 250 W Through Hole TO-247-3
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Power - Max 250 W
Switching Energy 700µJ (on), 280µJ (off)
Input Type Standard
Gate Charge 170 nC
Td (on/off) @ 25°C 83ns/170ns
Test Condition 400V, 30A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTG30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNGTG30N60FLWG,2156-NGTG30N60FLWG-ON,NGTG30N60FLWGOS
Standard Package 30
Win Source Part Number 1082084-NGTG30N60FLWG
Ultra Librarian 3D Model Ultra Librarian NGTG30N60FLWG CAD Model

Description

The NGTG30N60FLWG is a high-performance insulated gate bipolar transistor (IGBT) manufactured by ON Semiconductor, designed to deliver efficiency and power handling capabilities for a wide range of applications. This IGBT is a part of the Field Stop II Trench IGBT family, which is renowned for its excellent performance in terms of switching speed and minimal energy loss during operation.

Key Features

  • Current Rating: The NGTG30N60FLWG has a continuous collector current rating of 30A at 25°C, which enables it to handle significant power levels for industrial applications.
  • Voltage Rating: With a collector-emitter voltage (Vce) of 600V, it is suitable for mid-range voltage applications, providing a good balance between breakdown voltage and conduction losses.
  • Low On-Resistance: The low on-resistance of this IGBT ensures minimal conduction losses, making it an energy-efficient choice for electronic designs.
  • High-Speed Switching: It offers high-speed switching capabilities which are essential for reducing switching losses and improving overall efficiency in converters and inverters.
  • Co-Packaged Freewheeling Diode: The IGBT comes with a co-packaged fast and soft recovery anti-parallel diode, which is optimized for the high switching speeds and reduces the need for additional external components.

Applications

The NGTG30N60FLWG is ideal for a variety of applications that require high efficiency and reliability. These include:

  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Induction Heating Systems
  • Motor Drives
  • Power Factor Correction (PFC) Circuits

Additional Information

The NGTG30N60FLWG is built with ON Semiconductor's proprietary technology, ensuring robust performance and long-term reliability. It is available in a TO-247 package, which is widely used in high-power applications due to its ability to efficiently dissipate heat. Additionally, this IGBT is designed to be easy to drive and integrate into various circuit configurations, supporting designers in achieving optimized system performance.

For those looking to incorporate this IGBT into their designs, ON Semiconductor provides comprehensive technical documentation, including datasheets, application notes, and design guides to assist in the selection and implementation process.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3978 $62.9010
105+ $1.1469 $120.4245
160+ $1.1111 $177.7760
215+ $1.0753 $231.1895
280+ $1.0394 $291.0320
375+ $0.9319 $349.4625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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