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NJVMJD31CT4G-VF01

Part No NJVMJD31CT4G-VF01
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 3A DPAK / Trans GP BJT NPN 100V 3A 1560mW Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Transistor Type NPN
Current - Collector (Ic) (Maximum) 3A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) @ Ib, Ic 1.2V @ 375mA, 3A
Current - Collector Cutoff (Maximum) 50μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 25 @ 1A, 4V
Power - Max 1.56W
Frequency - Transition 3MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting SMD
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Package DPAK
Win Source Part Number 790713-NJVMJD31CT4G-VF01
Popularity Medium
Supply and Demand Status Limited
Family Name NJVMJD31C
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian NJVMJD31CT4G-VF01 CAD Model

Description

The NJVMJD31CT4G-VF01 is a high-performance, complementary NPN-PNP bipolar transistor pair from ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed for general-purpose amplifier and switching applications, offering a robust and versatile solution for a wide range of electronic circuits.

Key Features

  • Complementary Transistor Pair: The device includes one NPN and one PNP transistor, which allows for push-pull amplifier configurations, providing high efficiency and good thermal stability.
  • High Collector-Emitter Voltage: With a V<sub>CEO of 100V, it can handle higher voltage applications, making it suitable for power supply and motor control circuits.
  • High Collector Current: The transistor pair is capable of a collector current of up to 3A, ensuring adequate current handling for a variety of applications.
  • Low Saturation Voltage: This feature minimizes on-state power dissipation, improving overall efficiency and reducing thermal challenges in designs.
  • Fast Switching Times: The device offers quick switching capabilities, which is essential for high-frequency or pulse-width-modulated (PWM) applications.
  • High Power Dissipation: With a power dissipation of 20W, the NJVMJD31CT4G-VF01 can withstand higher power levels, which is beneficial in power amplification tasks.

Applications

The NJVMJD31CT4G-VF01 is well-suited for a broad spectrum of applications, including but not limited to:

  • Power regulators
  • DC-DC converters
  • Motor controllers
  • Audio amplifiers
  • Signal processing
  • Switching circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NJVMJD31CT4G-VF01 is no exception. The device is built to meet stringent industry standards, ensuring reliability and performance in even the most demanding environments.

Environmental Compliance

The NJVMJD31CT4G-VF01 is compliant with RoHS (Restriction of Hazardous Substances) directives, which means it is manufactured with a focus on environmental safety and sustainability. This compliance ensures that the device is suitable for use in a variety of markets, including those that require lead-free components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4046 $58.6670
350+ $0.3321 $116.2350
540+ $0.3217 $173.7180
745+ $0.3113 $231.9185
960+ $0.3009 $288.8640
1,285+ $0.2698 $346.6930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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