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NJVMJD31T4G

Part No NJVMJD31T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 3A DPAK / Bipolar (BJT) Transistor NPN 40 V 3 A 3MHz 1.56 W Surface Mount DPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Manufacturer onsemi
Packaging Reel - TR
Transistor Type NPN
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V
Power - Max 1.56 W
Frequency - Transition 3MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NJVMJD31
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-NJVMJD31T4GTR,488-NJVMJD31T4GDKR,NJVMJD31T4G-ND,488-NJVMJD31T4GCT
Standard Package 2,500
Win Source Part Number 1325084-NJVMJD31T4G
Ultra Librarian 3D Model Ultra Librarian NJVMJD31T4G CAD Model

Description

The NJVMJD31T4G from ON Semiconductor is a robust and high-performance power transistor designed to cater to a variety of applications requiring efficient power regulation and control. This component is part of ON Semiconductor's broad portfolio of power transistors that are known for their reliability, durability, and efficiency.

Key Features

  • High Voltage Capacity: The NJVMJD31T4G is capable of handling high voltages, making it suitable for applications that operate under elevated voltage conditions.
  • Current Handling: This power transistor can manage significant current loads, ensuring stable performance even under high power demand.
  • Low Saturation Voltage: The device has been designed to have a low collector-emitter saturation voltage, which reduces power loss and improves efficiency.
  • Fast Switching Speed: With a fast switching response, the NJVMJD31T4G is ideal for circuits that require quick transitions between on and off states.
  • Thermal Performance: The transistor is equipped with superior thermal characteristics, ensuring that it operates effectively across a wide temperature range.

Applications

The NJVMJD31T4G is versatile and can be used in a variety of applications, such as:

  • Power supply regulators
  • DC-DC converters
  • Motor controllers
  • Switching circuits
  • Audio amplifiers
  • Automotive and industrial systems

Specifications

With a focus on high-quality manufacturing, ON Semiconductor ensures that the NJVMJD31T4G meets stringent specifications for optimal performance:

  • Collector-Emitter Voltage (Vceo): 100V
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 1.56W
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Quality and Environmental Compliance

ON Semiconductor is committed to environmental stewardship and the NJVMJD31T4G is manufactured in compliance with RoHS directives, ensuring that it is free from harmful substances. Additionally, the company's quality management system ensures that each product meets high standards for performance and reliability.

Whether you're designing power management systems for consumer electronics or industrial machinery, the NJVMJD31T4G from ON Semiconductor is a reliable choice that offers efficiency, durability, and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.1973 $50.3115
620+ $0.1619 $100.3780
960+ $0.1569 $150.6240
1,320+ $0.1518 $200.3760
1,705+ $0.1468 $250.2940
2,280+ $0.1316 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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