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NJVMJD47T4G

Part No NJVMJD47T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 250V 1A DPAK / Bipolar (BJT) Transistor NPN 250 V 1 A 10MHz 1.56 W Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Manufacturer onsemi
Packaging Reel - TR
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 250 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V
Power - Max 1.56 W
Frequency - Transition 10MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NJVMJD47
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number NJVMJD47T4G-ND,NJVMJD47T4GOSTR,NJVMJD47T4GOSCT,NJVMJD47T4GOSDKR
Standard Package 2,500
Win Source Part Number 1325681-NJVMJD47T4G
Ultra Librarian 3D Model Ultra Librarian NJVMJD47T4G CAD Model

Description

The NJVMJD47T4G from ON Semiconductor is a robust and versatile NPN bipolar power transistor designed to meet the needs of a wide array of electronic applications. This high-quality component is particularly well-suited for linear and switching applications, offering an excellent combination of performance, reliability, and efficiency.

Key Features

  • High Collector-Emitter Breakdown Voltage: With a V<sub>CEO of 40V, the NJVMJD47T4G can handle significant voltage across the collector and emitter terminals without breaking down, making it suitable for higher voltage circuits.
  • Collector Current: This transistor is capable of a continuous collector current (I<sub>C) of up to 8 A, allowing it to control a considerable amount of power in electronic circuits.
  • Power Dissipation: It has a power dissipation rating of 20W, ensuring that it can manage the heat generated during operation without compromising performance.
  • High DC Current Gain: Featuring a high h<sub>FE (DC current gain) range, the NJVMJD47T4G provides efficient current amplification, making it an excellent choice for amplifiers and switching applications that require high gain.
  • Complementary PNP Type: The NJVMJD47T4G has a complementary PNP type, allowing designers to create push-pull configurations for applications that require a symmetrical drive.
  • Package: It comes in a Halogen-Free and RoHS compliant package, ensuring environmental sustainability and meeting current global regulatory standards.

Applications

The NJVMJD47T4G transistor is ideal for a broad range of applications, including:

  • Power regulators
  • Motor controls
  • Audio amplifiers
  • Switching circuits
  • Driver stages in high-fidelity amplifiers and television circuits

Conclusion

With its high voltage and current handling capabilities, thermal efficiency, and high current gain, the NJVMJD47T4G from ON Semiconductor is a reliable choice for designers looking to enhance the performance and reliability of their electronic designs. Its compliance with environmental standards further ensures that your product remains future-proof and globally marketable.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6845 $58.1825
200+ $0.5617 $112.3400
310+ $0.5442 $168.7020
430+ $0.5266 $226.4380
555+ $0.5090 $282.4950
740+ $0.4564 $337.7360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,344 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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