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NLAS3699BMN1R2G

Part No NLAS3699BMN1R2G
Manufacturer ON Semiconductor
Catalog Interface - Analog Switches, Multiplexers, Demultiplexers
Description IC SWITCH DUAL DPDT 16QFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Switch Circuit DPDT
Number of Circuits 2
Max On Resistance 550 mOhm
Channel-to-Channel Matching (ΔRon) 50 mOhm
Single Supply Voltage (V+) 1.65 V to 4.5 V
Max Switch Time (Ton,Toff) 50ns, 50ns
-3db Bandwidth 20MHz
Charge Injection 50pC
Channel Capacitance(CS off, CD off) 7pF
Max Leakage Current (IS off) 500nA
Crosstalk -62dB @ 100kHz
Temperature Range - Operating -40°C to 85°C (TA)
Case / Package 16-QFN (3x3)
Win Source Part Number 114467-NLAS3699BMN1R2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NLAS3699BMN1R2G CAD Model

Description

The NLAS3699BMN1R2G is a high-performance, dual SPDT (Single Pole Double Throw) analog switch from ON Semiconductor, a leading provider in energy-efficient electronics innovations. This analog switch is designed to provide precision and flexibility, making it an ideal choice for a wide range of applications including signal routing, data acquisition systems, and communication devices.

Key Features

  • Low Voltage Operation: The device operates at a low voltage range of 1.65V to 4.5V, making it suitable for portable and battery-powered applications where power efficiency is critical.
  • High Bandwidth: With a bandwidth of 300 MHz, the NLAS3699BMN1R2G ensures minimal signal distortion and can be used in high-speed signal switching applications.
  • Low On-Resistance: It features a low on-resistance (RON) of typically 4.5Ω at 4.5V VCC, which reduces power loss and improves signal integrity.
  • Low Crosstalk: Designed with low crosstalk characteristics, this component minimizes interference between signal paths, enhancing overall system performance.
  • ESD Protection: The switch includes robust Electrostatic Discharge (ESD) protection, safeguarding the device against static damage during handling and operation.
  • Compact Packaging: The NLAS3699BMN1R2G is available in a space-saving micro-miniature package, making it well-suited for applications where board space is at a premium.

Applications

The versatility of the NLAS3699BMN1R2G allows it to be utilized in a variety of applications, such as:

  • Audio and video signal routing
  • Cellular phones and PDAs
  • Portable test and measurement equipment
  • Data acquisition systems
  • Medical devices
  • Communication systems

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the NLAS3699BMN1R2G is no exception. It is manufactured using a robust silicon process, ensuring long-term reliability and performance in the most demanding conditions. Additionally, it is RoHS compliant and lead-free, reflecting ON Semiconductor's dedication to environmental sustainability.

With its combination of low power operation, high-speed switching, and small form factor, the NLAS3699BMN1R2G from ON Semiconductor represents a versatile and efficient solution for modern electronic switching needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.6720 $59.0160
8+ $16.1411 $129.1288
12+ $15.6375 $187.6500
16+ $15.1328 $242.1248
20+ $14.6281 $292.5620
27+ $13.1150 $354.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,580 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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