The ON Semiconductor NRVB140ESFT1G is a high-performance Schottky barrier diode designed for applications requiring low forward voltage drop and high surge current capabilities. This diode is ideal for use in high-frequency rectification and freewheeling applications in power supplies and other power-switching applications.

Key Features

• Low Forward Voltage Drop: The NRVB140ESFT1G offers a low forward voltage drop, which enhances system efficiency by reducing power losses during conduction.
• High Surge Current Capability: This diode can handle high surge currents, making it suitable for applications that experience occasional overcurrent conditions.
• Power Dissipation: With a power dissipation of 1.25W, this device can sustain moderate power levels, suitable for a variety of electronic circuits.
• High Junction Temperature: The maximum operating junction temperature of 150°C enables the diode to perform reliably in high-temperature environments.
• Surface Mount Package: The NRVB140ESFT1G comes in a compact SMB (DO-214AA) package, which is ideal for automated assembly processes and space-constrained applications.
• Lead-Free and RoHS Compliant: This product is lead-free and RoHS compliant, making it an environmentally friendly choice for electronic manufacturers.

Applications

The NRVB140ESFT1G is versatile and can be used in various applications such as:

• Switching power supplies
• Converters
• Free-wheeling diodes
• Reverse battery protection
• DC-DC converters
• Automotive applications

Product Specifications

Parameter Value Package SMB (DO-214AA) Maximum Repetitive Reverse Voltage (V<sub>RRM) 40V Average Rectified Forward Current (I<sub>F(AV)) 1A Maximum Forward Voltage Drop (V<sub>F) @ I<sub>F 0.385V @ 1A Power Dissipation (P<sub>D) 1.25W Operating Junction Temperature (T<sub>J) -55°C to +150°C

The NRVB140ESFT1G Schottky barrier diode by ON Semiconductor is a robust and reliable component that provides efficient operation and high surge current protection in a variety of electronic applications.