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NSBA143ZF3T5G

Part No NSBA143ZF3T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V SOT1123
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 254 mW
Mounting Type Surface Mount
Package / Case SOT-1123
Supplier Device Package SOT-1123
Base Product Number NSBA143
Standard Package 8,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 887638-NSBA143ZF3T5G
Ultra Librarian 3D Model Ultra Librarian NSBA143ZF3T5G CAD Model

Description

The NSBA143ZF3T5G is a cutting-edge bipolar junction transistor (BJT) from ON Semiconductor, renowned for its high efficiency and reliability. This high-performance transistor is designed to meet the rigorous demands of modern electronic circuits, providing a perfect blend of low voltage operation and high current handling capabilities.

Key Features:

  • Low V<sub>CE(sat): The NSBA143ZF3T5G boasts a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency in switching applications.
  • High Current Gain Bandwidth Product: With its excellent frequency response, this transistor is ideal for amplification of high-frequency signals.
  • Complementary PNP Type: The NSBA143ZF3T5G is the NPN counterpart to the complementary PNP type transistor, allowing for versatile use in push-pull amplifier configurations.
  • Surface Mounted Design: This device comes in a small surface-mounted package (SOT-23), making it suitable for compact PCB layouts and high-density electronic assemblies.
  • Pb-Free and RoHS Compliant: The NSBA143ZF3T5G is lead-free and complies with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for electronic manufacturing.

Applications:

The versatile nature of the NSBA143ZF3T5G allows it to be used in a wide variety of applications, including:

  • Power management circuits
  • Switching regulators
  • Signal amplification
  • Audio amplifiers
  • Driver stages in hi-fi systems
  • Automotive modules

Technical Specifications:

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 50 V Collector Current (I<sub>C) 100 mA Power Dissipation (P<sub>D) 225 mW DC Current Gain (h<sub>FE) 100 to 600 Operating Temperature Range -55°C to +150°C

With its superior performance and sustainable design, the NSBA143ZF3T5G from ON Semiconductor is an excellent choice for designers looking to enhance their electronic products with a reliable and efficient transistor.

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