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NDT01N60T1G

Part No NDT01N60T1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.4A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 50μA
Max Gate Charge 7.2nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Tc)
Maximum Rds On at Id,Vgs 8.5 Ohm @ 200mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223 (TO-261)
Dimension TO-261-4, TO-261AA
Win Source Part Number 1082870-NDT01N60T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDT01N60T1G CAD Model

Description

ON Semiconductor NDT01N60T1G - High Performance MOSFET

The NDT01N60T1G from ON Semiconductor is a cutting-edge power MOSFET designed to deliver high efficiency and reliability for a wide range of applications. This N-channel MOSFET is a testament to ON Semiconductor's commitment to providing innovative solutions that enhance energy conservation and reduce heat generation.

Key Features:

  • Low On-Resistance: The device boasts an exceptionally low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and improves overall system efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) rating, the NDT01N60T1G is capable of handling high current loads, making it suitable for demanding power applications.
  • High Voltage Threshold: The MOSFET operates at a high drain-source voltage (V<sub>DSS), providing a wide margin for applications that experience voltage surges, thus ensuring safe operation and longevity.
  • Fast Switching Speed: The device's fast switching characteristics enable high-speed operation, which is essential for reducing switching losses and improving performance in high-frequency circuits.
  • Low Gate Charge: A low total gate charge (Q<sub>G) reduces the power required to drive the MOSFET, contributing to the conservation of energy within the system.

Applications:

The versatility of the NDT01N60T1G makes it an ideal choice for a broad spectrum of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Management Systems
  • DC-DC Converters
  • Motor Drives
  • LED Lighting
  • Automotive Electronics
  • High-Efficiency Power Circuits

Package and Quality Assurance:

Encased in a robust and compact DPAK (TO-252) package, the NDT01N60T1G is designed for surface-mount technology, ensuring ease of integration into various circuit designs. ON Semiconductor's commitment to quality is reflected in the rigorous testing and quality control measures that accompany each component, ensuring reliable performance in even the most challenging environments.

In summary, the NDT01N60T1G from ON Semiconductor represents a superior choice for designers seeking a high-performance MOSFET that combines efficiency, speed, and reliability to power the next generation of electronic devices.

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