The ON Semiconductor NSBC114EPDXV6T1 is a high-performance NPN bipolar (BJT) transistor designed to offer superior switching performance and reliability for a wide range of applications. This compact and efficient transistor is part of ON Semiconductor's portfolio of semiconductor components renowned for their quality and durability.

Key Features

• High Current Gain Bandwidth Product: With an exceptional frequency performance, this transistor is suitable for applications requiring high-speed switching.
• Low Collector-Emitter Saturation Voltage: The low V<sub>CE(sat) helps in reducing power loss and improving efficiency, making it ideal for power management applications.
• Complementary PNP Type Available: The NSBC114EPDXV6T1 has a complementary PNP type, providing designers with flexibility in creating push-pull configurations for various circuit designs.
• Miniature Package: Encased in a small SOT-563 surface-mount package, this transistor is perfect for space-constrained applications.
• Lead-Free and RoHS Compliant: Adhering to environmental standards, this product is lead-free and complies with the RoHS directive, making it suitable for use in green applications.

Applications

The NSBC114EPDXV6T1 is versatile and can be used in a broad range of applications. It is particularly well-suited for:

• Power management circuits
• Signal amplification
• Audio amplifiers
• Switching regulators
• Driver stages in hi-fi amplifiers and television circuits

Technical Specifications

Parameter Value Configuration Single Collector-Emitter Voltage V<sub>CEO 50V Collector-Base Voltage V<sub>CBO 60V Emitter-Base Voltage V<sub>EBO 6V Collector Current - Continuous I<sub>C 100mA Power Dissipation P<sub>D 300mW

The NSBC114EPDXV6T1 from ON Semiconductor represents a blend of performance, efficiency, and miniaturization, making it an excellent choice for designers looking for a reliable transistor in their electronic designs.