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NSBC114TDXV6T1G

Part No NSBC114TDXV6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.5W SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 500mW
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 1083609-NSBC114TDXV6T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NSBC114TDXV6T1G CAD Model

Description

Introducing the NSBC114TDXV6T1G from ON Semiconductor

The NSBC114TDXV6T1G is a state-of-the-art NPN Bipolar Digital Transistor (BRT) from ON Semiconductor, designed to deliver exceptional performance for a wide range of applications. This innovative product combines a single NPN transistor with a series base resistor to enable high-speed switching operations and minimize component count in various digital and switching designs.

Key Features

  • Integrated Bias Resistor: The NSBC114TDXV6T1G comes with a built-in bias resistor, which simplifies circuit design by reducing the number of components required. This resistor has a nominal value of 10 kΩ, providing optimal biasing for the transistor without the need for external resistors.
  • High Current Gain: With a high current gain (hFE), this BRT ensures efficient current amplification, making it suitable for low-level signal applications.
  • Low V<sub>CE(sat): The device exhibits a low collector-emitter saturation voltage, which translates to reduced power consumption and improved efficiency, particularly beneficial in battery-powered devices.
  • Robust Performance: ON Semiconductor's NSBC114TDXV6T1G is designed to withstand harsh operating conditions, offering a continuous collector current of 100 mA and a maximum operating temperature of 150°C.
  • Small Package Footprint: Encased in a small SOT-563 surface-mount package, the transistor is ideal for space-constrained applications, allowing for high-density PCB layouts.
  • RoHS Compliant: In alignment with environmental standards, the NSBC114TDXV6T1G is a RoHS-compliant product, meeting the requirements for lead-free manufacturing.

Applications

The NSBC114TDXV6T1G is versatile and can be utilized in various applications, including but not limited to:

  • Digital logic circuits
  • Inverter circuits
  • Signal processing
  • Power management systems
  • Portable and consumer electronics

ON Semiconductor's commitment to quality ensures that the NSBC114TDXV6T1G meets the highest standards of reliability and performance. Whether you are designing a new circuit or optimizing an existing one, this BRT is an excellent choice for efficient and compact digital switching solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
655+ $0.0882 $57.7710
1,595+ $0.0725 $115.6375
2,470+ $0.0702 $173.3940
3,405+ $0.0679 $231.1995
4,395+ $0.0658 $289.1910
5,885+ $0.0589 $346.6265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,340 pieces
MOQ: 655 pcs
Order Increment : 1 pcs
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