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NSS20200W6T1G

Part No NSS20200W6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 2A SC88/SC70-6
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr onsemi
Series -
Package Tape & Reel
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 215mV @ 20mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
Power - Max 555 mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NSS202
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1379374-NSS20200W6T1G
Ultra Librarian 3D Model Ultra Librarian NSS20200W6T1G CAD Model

Description

ON Semiconductor NSS20200W6T1G Power Transistor

The ON Semiconductor NSS20200W6T1G is a high-performance NPN Silicon Power Transistor designed to deliver efficiency and reliability for a range of electronic applications. This versatile component is well-suited for linear and switching applications, making it an ideal choice for designers looking to optimize power management in their circuits.

Key Features

  • High Collector-Emitter Breakdown Voltage: The NSS20200W6T1G boasts a collector-emitter breakdown voltage (BVCEO) of 200V, providing a wide safety margin for applications that operate at high voltages.
  • High Current Handling: With a continuous collector current (IC) rating of 2A, this transistor can handle significant current loads, making it suitable for power regulation tasks.
  • Low Collector-Emitter Saturation Voltage: The low saturation voltage (VCE(sat)) minimizes power loss and improves efficiency, which is critical in power-sensitive designs.
  • High Power Dissipation: The device can dissipate up to 25W of power, allowing it to manage thermal loads effectively during operation.
  • Fast Switching Speeds: The transistor's fast switching capabilities ensure that it can respond quickly to control signals, an essential feature for high-frequency applications.
  • High Temperature Operation: Capable of operating at junction temperatures (TJ) ranging from -55°C to +150°C, the NSS20200W6T1G is reliable under a broad spectrum of environmental conditions.

Applications

The NSS20200W6T1G is well-suited for a variety of applications, including:

  • Power supply regulation
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • Switching regulators
  • Power management in consumer and industrial electronics

Package and Quality Assurance

Encased in a Pb-free, Halogen-free/BFR-free and RoHS compliant SOT-223 package, the NSS20200W6T1G ensures a minimal environmental footprint while offering robustness and compactness. ON Semiconductor's commitment to quality is reflected in the rigorous testing and compliance to industry standards, ensuring that this power transistor will deliver consistent performance and reliability.

Whether you're designing power supplies, motor controllers, or audio systems, the ON Semiconductor NSS20200W6T1G provides the power handling and efficiency you need to create compact, high-performance electronic products.

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