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NSS40601CF8T1G

Part No NSS40601CF8T1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 40V 6A CHIPFET / Bipolar (BJT) Transistor NPN 40 V 6 A 140MHz 830 mW Surface Mount ChipFET™
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 135mV @ 400mA, 4A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
Power - Max 830 mW
Frequency - Transition 140MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SMD, Flat Lead
Supplier Device Package ChipFET™
Base Product Number NSS40601
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2156-NSS40601CF8T1G-OS,NSS40601CF8T1GOSDKR,ONSONSNSS40601CF8T1G,NSS40601CF8T1GOSTR,NSS40601CF8T1GOSCT
Standard Package 3,000
Win Source Part Number 991062-NSS40601CF8T1G
Ultra Librarian 3D Model Ultra Librarian NSS40601CF8T1G CAD Model

Description

The ON Semiconductor NSS40601CF8T1G is a high-performance, PNP Silicon Transistor that offers a blend of efficiency and precision, making it an ideal choice for a wide range of applications. This transistor is designed to meet the stringent requirements of modern electronic circuits, providing reliable performance and consistency.

Key Features

  • Low VCE(sat): The NSS40601CF8T1G boasts a low collector-emitter saturation voltage, which enhances its efficiency by minimizing power loss during operation.
  • High Current Gain Bandwidth Product: With a high fT of 80 MHz, this transistor is suitable for amplification in high-frequency applications.
  • High Collector Current: It supports a collector current of up to -500 mA, making it capable of driving moderate loads.
  • Complementary NPN Type Available: For design flexibility, there is a complementary NPN transistor available, allowing for push-pull configurations in amplification circuits.
  • Power Dissipation: Capable of dissipating up to 1.4 W, this transistor can handle a fair amount of power, making it suitable for a variety of applications.
  • Small Package: The SOT-23 package is compact and suitable for space-constrained applications.

Applications

The NSS40601CF8T1G is versatile and can be used in various applications, including:

  • Power management circuits
  • Signal amplification
  • Audio amplifiers
  • Switching applications
  • Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NSS40601CF8T1G is no exception. It is manufactured to high standards, ensuring reliability and performance in even the most demanding situations. Whether used in consumer electronics or industrial systems, this transistor is built to deliver consistent results over its lifespan.

Environmental Compliance

The NSS40601CF8T1G complies with RoHS and Green standards, reflecting ON Semiconductor's dedication to environmental responsibility. This compliance ensures that the product is free from harmful substances and is suitable for use in environmentally sensitive applications.

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