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NSVMMBT2907AWT1G

Part No NSVMMBT2907AWT1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 60V 0.6A SC70-3  /  Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 150 mW Surface Mount SC-70-3 (SOT323)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 150 mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number NSVMMBT2907
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names NSVMMBT2907AWT1GOSCT,NSVMMBT2907AWT1GOSDKR,2156-NSVMMBT2907AWT1G-OS,ONSONSNSVMMBT2907AWT1G,NSVMMBT2907AWT1G-ND,NSVMMBT2907AWT1GOSTR
Standard Package 3,000
Win Source Part Number 970112-NSVMMBT2907AWT1G
Ultra Librarian 3D Model Ultra Librarian NSVMMBT2907AWT1G CAD Model

Description

ON Semiconductor NSVMMBT2907AWT1G PNP Transistor

The NSVMMBT2907AWT1G from ON Semiconductor is a high-performance PNP bipolar transistor that is designed to meet the rigorous demands of modern electronic circuits. This versatile component is suitable for a wide range of applications, including switching and amplification in industrial, commercial, and consumer products. With its compact SOT-323 package, the NSVMMBT2907AWT1G is ideal for space-constrained applications where efficiency and reliability are paramount.

Key Features

  • Transistor Type: PNP
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current - Continuous (IC): 600mA
  • DC Current Gain (hFE): 100 to 300 at 10mA, 1V
  • Power Dissipation (Pd): 225mW
  • Operating and Storage Junction Temperature Range (TJ, Tstg): -55°C to +150°C
  • Package / Case: SOT-323

Applications

The NSVMMBT2907AWT1G is engineered for general-purpose amplification and switching tasks. It can be utilized in:

  • Power management circuits
  • Signal amplification
  • Load drivers
  • Voltage regulation modules
  • Consumer electronics such as audio amplifiers and control circuits

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NSVMMBT2907AWT1G is manufactured with state-of-the-art technology to ensure stable performance over its entire operating range. It is also compliant with the stringent requirements of the automotive industry, making it suitable for use in vehicle electronics where durability and dependability are essential.

Environmental Compliance

The NSVMMBT2907AWT1G is a lead-free and RoHS-compliant component, reflecting ON Semiconductor's dedication to environmental stewardship. This commitment helps customers create products that are not only powerful but also more environmentally friendly.

With its robust design, high current handling capability, and low power consumption, the NSVMMBT2907AWT1G from ON Semiconductor is an excellent choice for designers looking to optimize their circuit designs for performance and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,330+ $0.0377 $50.1410
3,240+ $0.0309 $100.1160
5,000+ $0.0300 $150.0000
6,900+ $0.0290 $200.1000
8,930+ $0.0280 $250.0400
11,955+ $0.0251 $300.0705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,000 pieces
MOQ: 1330 pcs
Order Increment : 1 pcs
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