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Same model may have multiple batches, images only for reference.
AOTF5N100 Real Image
Same model may have multiple batches, images only for reference.

AOTF5N100

Part No AOTF5N100
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 4A TO220F
Datasheet
AOTF5N100 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 4.2 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017284-AOTF5N100
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOTF5N100 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a N-Channel polarity electronic component used in discrete semiconductor products.

  • Maximum Power Dissipation: 42W (Tc)
  • Packaging: Tube/rail
  • Mounting: Through Hole
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Rds On: 4.2 Ohm @ 2.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0949 $60.2195
130+ $0.8984 $116.7920
200+ $0.8703 $174.0600
275+ $0.8422 $231.6050
355+ $0.8142 $289.0410
475+ $0.7300 $346.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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