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NSVMMUN2135LT1G

Part No NSVMMUN2135LT1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 50V SOT23-3  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number NSVMMUN2135
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 2156-NSVMMUN2135LT1G-OS,ONSONSNSVMMUN2135LT1G
Standard Package 3,000
Win Source Part Number 978038-NSVMMUN2135LT1G
Ultra Librarian 3D Model Ultra Librarian NSVMMUN2135LT1G CAD Model

Description

ON Semiconductor NSVMMUN2135LT1G - Bipolar Transistor

The NSVMMUN2135LT1G is a high-performance bipolar transistor from ON Semiconductor, designed to meet the stringent requirements of modern electronic applications. This PNP transistor is a part of ON Semiconductor's innovative portfolio of semiconductor solutions, providing designers with a reliable and efficient component for amplification and switching applications.

With its compact SOT-23 package, the NSVMMUN2135LT1G is optimized for space-constrained applications, ensuring a minimal footprint on the PCB while delivering robust performance. This makes it an ideal choice for portable and miniature devices where space is at a premium.

The device features a collector-emitter voltage (VCEO) of -50V and a collector current (IC) of up to -100mA, which allows it to handle moderate power levels in a variety of circuits. The transistor also boasts a low collector-emitter saturation voltage, which enhances its efficiency by minimizing power loss during operation.

ON Semiconductor has engineered the NSVMMUN2135LT1G with a focus on reliability. It offers excellent current gain characteristics over a broad range of temperatures, ensuring consistent performance even under varying environmental conditions. This stability makes it suitable for industrial, automotive, and consumer applications where reliability is critical.

Furthermore, the NSVMMUN2135LT1G is designed with a fast switching speed, which is essential for high-frequency operations. This feature, combined with its low saturation voltage, makes it an excellent choice for amplification in audio applications, as well as for driving loads in digital and analog circuits.

Environmental responsibility is a key consideration for ON Semiconductor, and the NSVMMUN2135LT1G reflects this commitment. It is manufactured with a "green" molding compound, and it is both RoHS compliant and halogen-free, ensuring minimal environmental impact and meeting the requirements of eco-conscious product designs.

In summary, the NSVMMUN2135LT1G from ON Semiconductor is a versatile, high-performance PNP bipolar transistor that offers a perfect blend of size, efficiency, and reliability, making it a top choice for designers looking to enhance their electronic applications.

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