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NSVMUN2237T1G

Part No NSVMUN2237T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.23W SC59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 50 Weeks
Features Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59-3
Manufacturer ON Semiconductor
Package Reel - TR
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SC-59-3
Family Name NSVMUN2237
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887716-NSVMUN2237T1G
Ultra Librarian 3D Model Ultra Librarian NSVMUN2237T1G CAD Model

Description

The NSVMUN2237T1G is a state-of-the-art dual NPN transistor designed and produced by ON Semiconductor, a leader in energy-efficient innovations. This device is engineered to deliver high performance in a compact SOT-363 package, making it ideal for space-constrained applications. The product is known for its low V<sub>CE(sat) and high current gain, which ensures efficiency and reliability in various electronic circuits.

Key Features

  • Configuration: The NSVMUN2237T1G features a dual NPN transistor configuration, allowing for the integration of two independent NPN bipolar junction transistors in a single package.
  • Energy Efficiency: With a low collector-emitter saturation voltage (V<sub>CE(sat)) typically at 0.2V, the device operates at lower power levels, reducing energy consumption in electronic systems.
  • Current Gain Performance: It boasts a high current gain (h<sub>FE), which is a measure of the transistor's amplification capability, leading to more efficient signal processing.
  • Package: The SOT-363 package is known for its small footprint and low profile, suitable for high-density PCB layouts and portable electronic devices.
  • RoHS Compliant: The NSVMUN2237T1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice.

Applications

The versatility of the NSVMUN2237T1G allows it to be used in a wide range of applications. It is particularly well-suited for:

  • Power management circuits
  • Signal amplification and processing
  • Switching applications
  • Audio amplifiers
  • Driver stages in amplifiers

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NSVMUN2237T1G is subjected to rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability. Customers can trust this component for their critical electronic designs.

In summary, the NSVMUN2237T1G from ON Semiconductor is an excellent choice for designers looking for a reliable, efficient, and space-saving dual NPN transistor. Its advanced features and compliance with environmental standards make it a sustainable and future-proof component for a multitude of electronic applications.

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