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Same model may have multiple batches, images only for reference.
SI7216DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7216DN-T1-GE3

Part No SI7216DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 6A PPAK 1212-8
Datasheet
SI7216DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 32 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 670pF @ 20V
Maximum Power Dissipation 20.8W
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 1096147-SI7216DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7216DN-T1-GE3 CAD Model

Description

The Vishay SI7216DN-T1-GE3 is a dual N-channel FET with a drain-source breakdown voltage of 40V and a continuous drain current of 6A @ 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 6A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 19nC @ 10V
  • Maximum Rds On: 32 mOhm @ 5A, 10V
  • Mounting: PowerPAK 1212-8 Dual package
  • Operating Temperature Range: -50°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4363 $50.1745
280+ $0.3580 $100.2400
435+ $0.3469 $150.9015
600+ $0.3357 $201.4200
775+ $0.3245 $251.4875
1,035+ $0.2909 $301.0815
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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