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NSVMUN5333DW1T1G

Part No NSVMUN5333DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 045380-NSVMUN5333DW1T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSVMUN5333DW1T1G CAD Model

Description

Product Overview: NSVMUN5333DW1T1G by ON Semiconductor

The NSVMUN5333DW1T1G is a high-performance, dual PNP transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This compact transistor is ideal for a variety of applications, where space-saving and power efficiency are of utmost importance. Encased in a small SOT-363 package, it is perfect for portable and miniaturized electronic assemblies.

Key Features

  • Transistor Type: The NSVMUN5333DW1T1G is a dual PNP transistor, which means it consists of two PNP transistors in a single package, providing designers with the ability to control two separate circuits within a single device.
  • Voltage & Current: It operates with a collector-emitter voltage of up to -50V and a collector current of -100mA, making it suitable for a variety of low to medium power applications.
  • Power Dissipation: With a power dissipation of 200mW, this transistor can handle a moderate amount of power, ensuring reliable operation in your circuit designs.
  • Package: The device comes in a SOT-363 package, known for its small footprint and low profile, which is highly advantageous for space-constrained applications.
  • Configuration: The dual configuration of the transistors allows for design flexibility, enabling the creation of complex circuits without the need for multiple discrete components.

Applications

The NSVMUN5333DW1T1G is versatile and can be used in various electronic circuits. Its applications include, but are not limited to:

  • Signal processing
  • Power management
  • Amplification and switching
  • Linear and digital application circuits

Quality and Reliability

ON Semiconductor is committed to delivering high-quality and reliable components. The NSVMUN5333DW1T1G is built to meet rigorous industry standards, ensuring long-term stability and performance in your electronic projects. Whether you are designing consumer electronics, industrial systems, or automotive applications, this dual PNP transistor is an excellent choice for your needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 350,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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