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BSP318SH6327XTSA1

Part No BSP318SH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.6A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 098187-BSP318SH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSP318SH6327XTSA1 CAD Model

Description

Overview

The BSP318SH6327XTSA1 is an advanced MOSFET providing excellent control and efficiency for electronic circuits. It’s engineered to meet high standards of performance and reliability.

Features and Benefits

  • Superior switching speed, optimizing performance in complex electronic systems.
  • Exceptional drain-to-source voltage, ensuring adaptability to various voltages.
  • Energy-efficient operation, supporting long battery life and reduced costs.
  • Robust packaging for increased durability and protection.

Applications

  • Power management systems
  • Industrial automation
  • Consumer electronics
  • Charging systems
  • Renewable energy systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.1053 $53.3689
30+ $3.3685 $101.0550
46+ $3.2632 $150.1072
64+ $3.1579 $202.1056
82+ $3.0527 $250.3214
110+ $2.7369 $301.0590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,720 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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