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NTB18N06L

Part No NTB18N06L
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 100mOhm @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V
Power Dissipation (Max) 48.4W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number NTB18
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649630-NTB18N06L
Ultra Librarian 3D Model Ultra Librarian NTB18N06L CAD Model

Description

ON Semiconductor NTB18N06L Power MOSFET

The NTB18N06L from ON Semiconductor is a high-performance Power MOSFET designed to deliver efficient power management and switching with low on-state resistance. This robust component is ideal for a wide range of applications, including power supplies, motor controls, and high-speed switching circuits. Its advanced technology ensures reliable operation and long-term durability, making it a preferred choice for engineers and designers looking for quality and performance.

Key Features

  • Low On-Resistance: The NTB18N06L boasts an exceptionally low on-resistance, which significantly reduces conduction losses and improves overall efficiency in applications.
  • High Current Capability: With the ability to handle high currents, this MOSFET can manage demanding loads with ease, ensuring stable performance in a variety of power-intensive applications.
  • Logic Level Gate Drive: The device can be driven by logic level voltages, making it compatible with modern microcontrollers and simplifying the design of control circuits.
  • Low Threshold Voltage: Its low threshold voltage allows for easy drive capability and fast switching performance, which is essential for high-efficiency power conversion.
  • Single Pulse Avalanche Energy Rated: The NTB18N06L is designed to withstand high-energy pulses in avalanche and commutation modes, providing reliable protection against unexpected voltage spikes.

Applications

The NTB18N06L Power MOSFET is versatile and can be used in a broad spectrum of applications. It is particularly useful in:

  • DC/DC Converters
  • Motor Drives
  • Power Management Systems
  • Switching Regulators
  • Automotive Environment
  • High-Speed Switching Circuits

Reliability and Performance

ON Semiconductor is known for its commitment to quality and reliability, and the NTB18N06L is no exception. This Power MOSFET is built to meet rigorous industry standards, ensuring that it performs consistently under various conditions. Its robustness and durability make it a reliable component in designing long-lasting electronic systems.

Whether you are working on a new design or updating an existing system, the NTB18N06L from ON Semiconductor is an excellent choice for efficient power control and switching operations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,067 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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