The NTB18N06T4G is a cutting-edge Power MOSFET device manufactured by ON Semiconductor, renowned for its high efficiency and reliability in a wide range of electronic applications. This N-channel MOSFET is a testament to ON Semiconductor's commitment to providing industry-leading power management solutions.

Key Features

• High Performance: With a drain-to-source voltage (V<sub>DS) of 60V, the NTB18N06T4G is designed to handle high voltage applications efficiently.
• Current Capability: Offering a continuous drain current (I<sub>D) of 18A, this MOSFET can support applications requiring a high current flow.
• Low R<sub>DS(on): The device features a low on-state resistance, which minimizes power loss and improves overall efficiency.
• Enhanced Durability: It is built to withstand rigorous conditions, ensuring a long operational lifespan.
• Temperature Performance: The operating temperature range of -55°C to 175°C allows the NTB18N06T4G to function in extreme environments.

Applications

The NTB18N06T4G is versatile and can be used in various applications, including:

• Power supply units
• DC-DC converters
• Motor drives
• Automotive applications
• Switching regulators

Product Specifications

Parameter Value V<sub>DS (Drain-to-Source Voltage) 60V I<sub>D (Continuous Drain Current) 18A R<sub>DS(on) (On-State Resistance) Typical value at V<sub>GS = 10V Operating Temperature Range -55°C to 175°C

Quality and Environmental Compliance

The NTB18N06T4G from ON Semiconductor complies with rigorous environmental standards, including RoHS and Pb-Free directives, ensuring a reduced environmental impact and suitability for eco-conscious applications.

For detailed technical specifications, application notes, and support documentation, customers are encouraged to visit the ON Semiconductor official website or contact their local sales representative.