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NTB25P06T4G

Part No NTB25P06T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 27.5A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1680pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 120W (Tj)
Maximum Rds On at Id,Vgs 82 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 129725-NTB25P06T4G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTB25P06T4G CAD Model

Description

ON Semiconductor NTB25P06T4G - Power MOSFET

The ON Semiconductor NTB25P06T4G is a high-performance P-Channel Power MOSFET designed to meet the stringent requirements of modern electronic circuits. This MOSFET is an ideal choice for power management applications due to its low on-resistance and high switching efficiency. The NTB25P06T4G is part of ON Semiconductor's PowerTrench® technology, which ensures that the device operates with minimal power loss and heat generation, making it suitable for energy-sensitive designs.

This device boasts a -60V drain-source breakdown voltage (V<sub>DS) and a continuous drain current (I<sub>D) of -25A, providing robust performance for a wide range of applications. The NTB25P06T4G is capable of withstanding high pulse currents, which is critical for applications that demand high surge currents. Its low gate charge (Q<sub>G) and fast switching capabilities make it a great choice for high-speed switching applications such as DC-DC converters, motor drives, and power management systems.

The NTB25P06T4G comes in a D2PAK (TO-263) package, which is widely used in industry due to its ability to handle high levels of power and its ease of mounting onto a printed circuit board (PCB). The package is designed for surface-mount technology (SMT), which allows for efficient assembly and space-saving design in electronic devices.

With a maximum power dissipation of 48W, the NTB25P06T4G can handle significant power levels, making it suitable for heavy-duty operations. The device also features a low threshold voltage (V<sub>th), which ensures that it can be easily driven by logic-level voltages, increasing its compatibility with microcontroller-based systems and other digital circuits.

Additionally, the NTB25P06T4G is designed with a rugged body diode, which provides reliable reverse recovery performance. This characteristic is particularly important in applications where the MOSFET is subjected to inductive loads, ensuring that the device can handle the reverse energy without failure.

In summary, the ON Semiconductor NTB25P06T4G is a versatile and efficient P-Channel Power MOSFET that offers low on-resistance, high switching speed, and energy-efficient operation in a compact D2PAK package. Its robust characteristics make it suitable for a diverse range of power management applications, where reliability and performance are of paramount importance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4103 $50.6163
51+ $1.9777 $100.8627
79+ $1.9159 $151.3561
108+ $1.8541 $200.2428
140+ $1.7923 $250.9220
187+ $1.6069 $300.4903
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,700 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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