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NTB30N06LT4G

Part No NTB30N06LT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 32nC @ 5V
Max Input Capacitance 1150pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 88.2W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 15A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083691-NTB30N06LT4G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Motor Drive & Control, Industrial
Ultra Librarian 3D Model Ultra Librarian NTB30N06LT4G CAD Model

Description

ON Semiconductor NTB30N06LT4G: Power MOSFET Overview

The NTB30N06LT4G is a high-performance Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is tailored for applications that demand efficient power conversion and switching with a focus on reliability and durability. The NTB30N06LT4G is a suitable component for a wide range of electronic circuits, including power supplies, motor controllers, and various automotive applications.

Key Features

  • High Drain-Source Breakdown Voltage (V<sub>DS): The device offers a robust breakdown voltage of 60V, making it suitable for systems that operate at moderate voltage levels.
  • Low On-Resistance (R<sub>DS(on)): With an R<sub>DS(on) of only 30 mΩ, the NTB30N06LT4G ensures efficient current flow with minimal power loss, which is critical for maintaining energy efficiency in power-sensitive designs.
  • High Continuous Drain Current (I<sub>D): It can handle a continuous drain current of up to 30A, which allows it to drive high-current loads without overheating or performance degradation.
  • Fast Switching Speed: The device is optimized for fast switching, reducing transition losses and improving performance in high-frequency applications.
  • Thermal Management: The NTB30N06LT4G comes in a D2PAK package which is known for its excellent thermal characteristics, ensuring that the device remains cool under heavy load conditions.

Applications

The versatility of the NTB30N06LT4G makes it an ideal choice for a variety of applications. These include:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Drives
  • Automotive Electronics
  • Battery Management Systems
  • Power Management Solutions

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTB30N06LT4G is no exception, with rigorous testing and quality control measures in place to ensure that each MOSFET meets the stringent requirements of industrial and automotive standards. Customers can trust this device to perform reliably even in the most demanding environments.

Overall, the NTB30N06LT4G Power MOSFET from ON Semiconductor is a high-efficiency, robust component designed for advanced electronic systems requiring high-speed switching and power handling capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 620 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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