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NTB30N20G

Part No NTB30N20G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 30A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 2335pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2W (Ta), 214W (Tc)
Maximum Rds On at Id,Vgs 81 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083694-NTB30N20G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTB30N20G CAD Model

Description

The NTB30N20G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient electronics. This device is specifically designed to meet the rigorous demands of power electronic applications, offering a combination of low on-resistance and high switching speed, making it an excellent choice for a wide range of applications.

Key Features

  • High Drain-Source Voltage (V<sub>DS): With a robust maximum rating of 200V, the NTB30N20G is suitable for high-voltage applications, ensuring reliability and performance under demanding conditions.
  • Low On-Resistance (R<sub>DS(on)): The device boasts an exceptionally low on-resistance of typically 98 mΩ, which translates to reduced power loss and improved efficiency in your power conversion systems.
  • High Continuous Drain Current (I<sub>D): A high continuous drain current of 24A ensures that the MOSFET can handle significant power levels, making it ideal for high-power applications.
  • Fast Switching Speed: Fast switching capabilities are critical for reducing energy losses during power conversion, and the NTB30N20G excels with its rapid switching performance.
  • Single Pulse Avalanche Energy Rated: This device can withstand high-energy pulses in the avalanche and commutation modes, offering enhanced ruggedness and reliability.
  • Low Gate Charge (Q<sub>G): The MOSFET's low gate charge enables faster switching speeds, which is crucial for high-frequency power converters and inverters.
  • Temperature Range: Operating within a temperature range of -55°C to 175°C, the NTB30N20G is designed to maintain its integrity and performance in extreme conditions.
  • Pb-Free Package: The device comes in a Pb-free package, aligning with environmental regulations and promoting sustainability in electronic components.

Applications

The NTB30N20G is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Systems
  • Power Inverter Systems
  • Automotive Applications
  • Other High-Efficiency Power Management Tasks

With its robust performance characteristics and ON Semiconductor's reputation for quality, the NTB30N20G is an excellent choice for engineers looking to improve the efficiency, reliability, and longevity of their power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,500 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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